Abstract
Thermal treatment of rice husk has been conducted up to 1000° C in air, oxygen, argon and non-oxidizing atmospheres. Chemical treatments consisted of HCI, H2SO4, HNO3, NaOH and NH4OH. Purity, particle size distribution and SEM micrographs of chemically treated samples are presented. Carbon and SiO2 contents in rice husk, coked at different temperatures and time, have been determined to show that a C : SiO2 ratio of 2:1, required for the production of solar grade silicon, can be achieved at low temperature. SiO2 of 99% purity can be obtained by acid leaching. The results have been interpreted in terms of two types of bonding of silicon, a rigid structural framework, and selective sites for the preferential attack of acid and alkali in rice husk.
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Patel, M., Karera, A. & Prasanna, P. Effect of thermal and chemical treatments on carbon and silica contents in rice husk. J Mater Sci 22, 2457–2464 (1987). https://doi.org/10.1007/BF01082130
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DOI: https://doi.org/10.1007/BF01082130