Abstract
One-dimensional SiGe superlattices with periods ranging from 100 to 800 Å have been deposited on Si substrates by periodically varying the Ge content of a mixed Si1-x Ge x multilayer structure fromx=0 tox=0.15. The deposition was successful, employing and UHV evaporation technique at a substrate temperature of 750°C fulfilling the four conditions: Single crystal growth, no interdiffusion, two-dimensional growth, and pseudomorphic growth. It is shown that mismatch above 8 · 10−3 favours growth by three-dimensional nucleation. The experimentally determined spacing of misfit dislocations is compared with theoretical results obtained by van der Merwe. The pseudomorphic growth behaviour of layers thinner than a critical thickness could be confirmed.
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Kasper, E., Herzog, H.J. & Kibbel, H. A one-dimensional SiGe superlattice grown by UHV epitaxy. Appl. Phys. 8, 199–205 (1975). https://doi.org/10.1007/BF00896611
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DOI: https://doi.org/10.1007/BF00896611