Abstract
Detailed observations have been made of the intensity oscillations in the specularly reflected and various diffracted beams in the RHEED pattern during MBE growth of GaAs, Ga x Al1−x As and Ge. The results indicate that growth occurs predominantly in a two-dimensional layer-by-layer mode, but there is some roughening, which is enhanced by deviations from stoichiometry and the presence of impurities. In the case of the GaAs (001) −2×4 reconstructed surface a combination of dynamic and static RHEED measurements has provided firm evidence for the presence of one-dimensional disorder features as well as surface steps.
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Neave, J.H., Joyce, B.A., Dobson, P.J. et al. Dynamics of film growth of GaAs by MBE from Rheed observations. Appl. Phys. A 31, 1–8 (1983). https://doi.org/10.1007/BF00617180
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DOI: https://doi.org/10.1007/BF00617180