Abstract
Ultrathin-layer (AlAs) m (GaAs) m superlattices withm = 1, 2, and 3 were grown by molecular beam epitaxy and characterized by x-ray diffraction and photoluminescence measurements. The appearance of distinct satellite peaks around the Bragg reflections demonstrate the formation of high-quality layered crystals. The observed luminescence shows a maximum at 2.033 eV form = 3, and the emission energy decreases form = 2 andm = 1 as well as for them = 4 superlattice. This result for the monolayer superlattice is in good agreement with recent theoretical calculations, and it shows that the (AlAs)1(GaAs)1 superlattice represents a new artificial semiconductor material with novel electronic properties.
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On leave from Mitsubishi Electric Corp., Central Research Laboratory, Amagasaki, Hyogo 661, Japan
On leave from Institute of Semiconductors, Academia Sinica, Beijing, PR China
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Isu, T., Jiang, D.S. & Ploog, K. Ultrathin-layer (AlAs) m (GaAs) m superlattices withm = 1,2,3 grown by molecular beam epitaxy. Appl. Phys. A 43, 75–79 (1987). https://doi.org/10.1007/BF00615210
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DOI: https://doi.org/10.1007/BF00615210