Abstract
Creep tests were undertaken on hot-pressed silicon nitride in the temperature range 1200 to 1400° C. The activation energy for creep was determined to be 140 kcal mol−1 and the stress exponent of creep rate was 1.7. The creep behaviour is ascribed to grain-boundary sliding accommodated by void deformation at triple points and by limited local plastic deformation. Electron microscopic evidence supporting this mechanism is presented.
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UdDin, S., Nicholson, P.S. Creep of hot-pressed silicon nitride. J Mater Sci 10, 1375–1380 (1975). https://doi.org/10.1007/BF00540828
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DOI: https://doi.org/10.1007/BF00540828