Abstract
The defect structure of acceptor (Al or Cr)-doped polycrystalline calcium titanate was investigated by measuring the oxygen partial pressure dependence (at 10° to 10−18 atm) of the electrical conductivity at 1000 and 1050° C. The observed electrical conductivity data were proportional to \(P_{{\text{O}}_{\text{2}} }^{ - {1 \mathord{\left/ {\vphantom {1 4}} \right. \kern-\nulldelimiterspace} 4}} \) for the oxygen pressure range < 10−10 atm and proportional to \(P_{{\text{O}}_{\text{2}} }^{ + {1 \mathord{\left/ {\vphantom {1 4}} \right. \kern-\nulldelimiterspace} 4}} \) for the oxygen pressure range ( 10−7 atm. The conductivity values were observed to increase with the acceptor concentration in the p-type region with the shift in the conductivity minima towards lower oxygen partial pressure. The absolute value of the electrical conductivity in the acceptor-doped samples were lower in the n-type region compared to the values in the undoped CaTiO3. Aluminium and chromium were found to be equally effective in acting as acceptor impurities in CaTiO3. The defect chemistry of CaTiO3 is dominated by the added acceptor impurities for the entire oxygen partial pressure range used in this investigation.
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Balachandran, U., Odekirk, B. & Eror, N.G. Defect structure of acceptor-doped calcium titanate at elevated temperatures. J Mater Sci 17, 1656–1662 (1982). https://doi.org/10.1007/BF00540792
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DOI: https://doi.org/10.1007/BF00540792