Abstract
Floating-zone Si crystals enclosed in quartz ampoules were exposed to Zn vapour released by an elemental diffusion source. Penetration profiles of Zn in Si were recorded using the spreading-resistance technique or neutron activation analysis. Both the erfc-type distributions observed in plastically deformed specimens and the non-erfc profiles determined on dislocationfree wafers are consistently interpreted within the framework of the kick-out model. As an implication, Si self-interstitials generated in excess by interstitial-to-substitutional transitions of in-diffusing Zn atoms annihilate not only at the surface but also at dislocations. On the other hand, dislocation-induced segregation of Zn appears to be rather minor, as revealed by transition electron microscopy. Combining the Zn incorporation rate in dislocation-free Si with solubility data from saturated specimens yields the self-interstitial contribution to the Si self-diffusion coefficient.
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E.R. Weber: Appl. Phys. A33, 1 (1983)
D. Gilles, W. Bergholz, W. Schröter: J. Appl. Phys. 59, 3590 (1986)
J. Utzig, D. Gilles: Mater. Sci. Forum 38–41, 729 (1989)
W. Frank, U. Gösele, H. Mehrer, A. Seeger: In Diffusion in Crystalline Solids, ed. by G.E. Murch, A.S. Nowick (Academic, New York 1984) p. 64
M. Perret, N.A. Stolwijk, L. Cohausz: J. Phys.: Condes. Matter 1, 6347 (1989)
U. Gösele, W. Frank, A. Seeger: Appl. Phys. 23, 361 (1980)
N.A. Stolwijk. J. Hölzl, W. Frank, E.R. Weber, H. Mehrer: Appl. Phys. A39, 37 (1986)
F.C. Frank, D. Turnbull: Phys. Rev. 104, 617 (1956)
I. Yonenaga, U. Onose, K. Sumino: J. Mater. Res. 2, 252 (1987)
S. Weiss, R. Beckmann, R. Kassing: Appl. Phys. A50, 151 (1990)
P. Stolz, G. Pensl, D. Grünebaum, N.A. Stolwijk: Mater. Sci. Eng. B4, 31 (1989)
P. Stolz: Thesis, University of Erlangen-Nürnberg (1990)
H.E. Altink, T. Gregorkiewicz, C.A.J. Ammerlaan: Solid State Commun. 75, 115 (1990)
A. Dörnen, R. Kienle, K. Thonke, P. Stolz, G. Pensl, D. Grünebaum, N.A. Stolwijk: Phys. Rev. B40, 12005 (1989); Mater. Res. Soc. Symp. Proc. 163, 21 (1990)
J.W. Chen, A.G. Milnes: Annu. Rev. Mater. Sci. 10, 157 (1980)
L.M.L.J. Leblans, M.L. Verheijke: Philips Tech. Rev. 25, 191 (1963/1964)
A. Almazouzi, H. Bracht, J. Bernardini, E.G. Moya, N.A. Stolwijk, H. Mehrer: J. Appl. Phys. (in press)
N.A. Stolwijk, B. Schuster, J. Hölzl: Appl. Phys. A33, 133 (1984)
T.Y. Tan, U. Gösele: Appl. Phys. A37, 1 (1985)
N.A. Stolwijk, B. Schuster, J. Hölzl, H. Mehrer, W. Frank: Physica 116B, 335 (1983)
J. Hauber, W. Frank, N.A. Stolwijk: Mater. Sci. Forum 38–41, 707 (1989)
A.D. Le Claire: Phys. Chem. 10, 261 (1970)
S. Mantovani, F. Nava, C. Nobili, G. Ottaviani: Phys. Rev. B33, 5336 (1985)
H.J. Mayer, H. Mehrer, K. Maier: Inst. Phys. Conf. Ser. 31, 186 (1977)
L. Kalinowski, R. Seguin: Appl. Phys. Lett 42, 680 (1983)
F. Morehead, N.A. Stolwijk, W. Meyberg, U. Gösele: Appl. Phys. Lett 42, 690 (1983)
A. Seeger: Phys. Status Solidi A61, 521 (1980)
U. Gösele, F. Morehead, W. Frank, A. Seeger: Appl. Phys. Lett 38, 157 (1981)
N.A. Stolwijk: Unpublished
M.M. Blouke, N. Holonyak, Jr., B.G. Streetman, H.R. Zwicker: J. Phys. Chem. Solids 31, 173 (1970)
R.O. Carlson: Phys. Rev. 108, 1390 (1957)
C.S. Fuller, F.J. Morin: Phys. Rev. 105, 379 (1957)
S.M. Sze: Physics of Semiconductor Devices, 2nd edn. (Wiley, New York 1981)
W. Shockley, J.T. Last: Phys. Rev. 107, 392 (1957)
R.G. Humphreys: J. Phys. C14, 2935 (1981)
H.D. Barber: Solid-State Electron. 10, 1039 (1967)
C. Jacobini, C. Canali, G. Ottaviani, A. Alberigi Quaranta: Solid-State Electron. 20, 77 (1977)
C.D. Thurmond: J. Electrochem. Soc. 122, 1133 (1975)
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Dedicated to H.J. Queisser on the occasion of his 60th birthday
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Grünebaum, D., Czekalla, T., Stolwijk, N.A. et al. Diffusion and solubility of zinc in dislocation-free and plastically deformed silicon crystals. Appl. Phys. A 53, 65–74 (1991). https://doi.org/10.1007/BF00323437
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DOI: https://doi.org/10.1007/BF00323437