Abstract
A typical way is shown to sort out important kinds of disorder found in a tetrahedrally-bonded elemental amorphous semiconductor such as Si or Ge. Generally, they are classified in quantitative and topological disorder. The quantitative disorder includes bond-length, bond-angle, and dihedral-angle variation, while the topological disorder includes the ring statistics. Using a tight-binding Hamiltonian for Si, we investigate the relationship between the kinds of disorder and the electronic structures of amorphous Si such as the energy bounds and the behaviour of the band tails. Extensions of the results thus obtained enable one to understand semiquantitatively the differences in the density of states between crystalline and amorphous Si as well as predict variations among different amorphous semiconductors.
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Yonezawa, F., Cohen, M.H. (1981). Theory of Electronic Properties of Amorphous Semiconductors. In: Yonezawa, F. (eds) Fundamental Physics of Amorphous Semiconductors. Springer Series in Solid-State Sciences, vol 25. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81604-8_10
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DOI: https://doi.org/10.1007/978-3-642-81604-8_10
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