Abstract
Large lattice relaxation was first revealed in electron spin resonance studies of vacancies and vacancy-impurity complexes in Si. These centers were found to have large Jahn-Teller distortions. More recent studies, mainly capacitance measurements, have revealed a number of other large lattice relaxation phenomena. These are large Stokes shifts in optical transitions, recombination enhanced defect motion, self-trapping at an impurity and capture by multiphonon emission. All of the processes mentioned above are briefly reviewed, and for capture by multiphonon emission, a detailed model is presented.
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© 1980 Springer-Verlag Berlin Heidelberg
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Henry, C.H. (1980). Large Lattice Relaxation Processes in Semiconductors. In: Kubo, R., Hanamura, E. (eds) Relaxation of Elementary Excitations. Springer Series in Solid-State Sciences, vol 18. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81482-2_2
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DOI: https://doi.org/10.1007/978-3-642-81482-2_2
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