Abstract
Indium arsenide (InAs) is a direct-band-gap semiconductor crystallizing in the zinc-blende structure. The relatively small direct band gap (∼0.36 eV at 300 K, Ref. [1]) and resulting high electron mobility (μn≥1×104 cm2/Vs at 300 K, Ref. [1]) have made this material interesting for use in Hall-effect device applications (see Ref. [2]). As a substrate, or active layer, InAs can be employed in conjunction with many semiconductors such as AlGaSb or InAsSb and has interesting heterojunction potential for modulation-doped field effect transistors, lasers and detectors in the wavelength range up to 10 μm, and quantum-well structures [2],
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Numerical Data and Functional Relationships in Science and Technology, edited by K.-H. Hellwege and O. Madelung, Landolt-Börnstein, New Series, Group III, Vol. 17, Pt. a (Springer, Berlin, 1982).
A. G. Milnes and A. Y. Polyakov, Mater. Sci. Eng. B 18, 237 (1993).
J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976).
S. N. Sahu, J. T. Borenstein, V. A. Singh, and J. W. Corbett, Phys. Status Solidi B 122, 661 (1984).
M.-Z. Huang and W. Y. Ching, J. Phys. Chem. Solids 46, 977 (1985).
S. Massidda, A. Continenza, A. J. Freeman, T. M. de Pascale, F. Meloni, and M. Serra, Phys. Rev. B 41, 12079 (1990).
S. Adachi, Phys. Rev. B 35, 7454 (1987).
S. Adachi, J. Appl. Phys. 66, 6030 (1989).
D. L. Rode, Phys. Rev. B 3, 3287 (1971).
M. Hass and B. W. Henvis, J. Phys. Chem. Solids 23, 1099 (1962).
O. G. Lorimor and W. G. Spitzer, J. Appl. Phys. 36, 1841 (1965).
A. Memon, T. J. Parker, and J. R. Birch, Proc. SPIE 289, 20 (1981).
K. A. Maslin, C. Patel, and T. J. Parker, Infrared Phys. 32, 303 (1991).
E. S. Koteles and W. R. Datars, Can. J. Phys. 54, 1676 (1976).
E. Haga and H. Kimura, J. Phys. Soc. Jpn 19, 471 (1964).
F. Matossi and F. Stern, Phys. Rev. 111, 472 (1958).
M. I. Aliev, Kh. A. Khalilov, and G. B. Ibragimov, Phys. Status Solidi B 140, K83 (1987).
E. D Palik and R. T. Holm, in Handbook of Optical Constants of Solids, edited by E. D. Palik (Academic, Orlando, 1985), p. 479.
A. N. Pikhtin and A. D. Yas’kov, Sov. Phys. Semicond. 12, 622 (1978).
G. Ghosh, J. Appl. Phys. 79, 9388 (1996).
M. Bertolotti, V. Bogdanov, A. Ferrari, A. Jascow, N. Nazorova, A. Pikhtin, and L. Schirone, J. Opt. Soc. Am. B 7, 918 (1990).
B. Jensen and A. Torabi, J. Opt. Soc. Am. B 2, 1395 (1985).
J. R. Dixon and J. M. Ellis, Phys. Rev. 123, 1560 (1961).
A. V. Varfolomeev, R. P. Seisyan, and R. N. Yakimova, Sov. Phys. Semicond. 9, 530 (1975).
B. M. Lavrushin, R. F. Nabiev, and Yu. M. Popov, Sov. Phys. Semicond. 22, 441 (1988).
M. Cardona and G. Harbeke, J. Appl. Phys. 34, 813 (1963).
R. E. Morrison, Phys. Rev. 124, 1314 (1961).
H. Ehrenreich, H. R. Philipp, and J. C. Phillips, Phys. Rev. Lett. 8, 59 (1962).
H. R. Philipp and H. Ehrenreich, Phys. Rev. 129, 1550 (1963).
S. S. Vishnubhatla and J. C. Woolley, Can. J. Phys. 46, 1769 (1968).
D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
C. M. Herzinger, P. G. Snyder, F. G. Celii, Y.-C. Kao, D. Chow, B. Johs, and J. A. Woollam, J. Appl. Phys. 79, 2663 (1996).
M. Cardona, W. Gudat, E. E. Koch, M. Skibowski, B. Sonntag, and P. Y. Yu, Phys. Rev. Lett. 25, 659 (1970).
M. Cardona, W. Gudat, B. Sonntag, and P. Y. Yu, in Proc. 10th Int. Conf. Phys emicond., Cambridge, Mass., 1970, edited by S. P. Keller, J. C. Hensel, and F. Stern (U. S. Atomic Energy Commission, Springfield, Va., 1970), p. 209.
W. Gudat, E. E. Koch, P. Y. Yu, M. Cardona, and C. M. Penchina, Phys. Status Solidi B 52, 505 (1972).
D. E. Aspnes, M. Cardona, V. Saile, M. Skibowski, and G. Spriissel, Solid State Commun. 31, 99 (1979).
X. Y. Gong, H. Kan, T. Makino, T. Yamaguchi, T. Nakatsukasa, M. Kumagawa, N. L. Rowell, A. Wang, and R. Rinfret, Cryst. Res. Technol. 30, 603 (1995).
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1999 Springer Science+Business Media New York
About this chapter
Cite this chapter
Adachi, S. (1999). Indium Arsenide (InAs). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_26
Download citation
DOI: https://doi.org/10.1007/978-1-4615-5247-5_26
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-7923-8567-7
Online ISBN: 978-1-4615-5247-5
eBook Packages: Springer Book Archive