Abstract
The Fractional Quantum Hall Effect (FQHE) represents a very surprising recent discovery in solid state physics. It is observed in high-mobility, two-dimensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest Landau level. Under those exceptional conditions, and at fractional filling ν of this level, the Hall resistance is found to be quantized to ρ xy = h/ie2, where i is a simple rational fraction. Concomitantly, the resistivity ρ xx drops towards zero. So far this effect has been observed close to ν=1/3, 2/3, 4/3, 5/3, 2/5, 3/5, 4/5, and 2/7 with quantum numbers i=ν quantized, in some cases, to better than 1 part in 104. The FQHE represents the unambiguous, experimental observation of a fractional quantum number. It is presently being explained as resulting from the formation of a novel incompressible quantum liquid with fractionally charged quasi-particles, and a finite gap separating the ground state from its excitations.
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© 1984 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Störmer, H.L. (1984). The fractional quantum hall effect. In: Grosse, P. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107444
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