Abstract
The name says it all: Chemical Vapor deposition. CVD depends on the availability of a volatile chemical, which can be converted by some reaction into the desired solid film. We’ve already discussed how the vapors, once produced, can be transported to the substrate and heated up when they get there. Next we need to think about what makes the vapors in the first place (that is, volatility) and how these vapors can react in the gas phase or on the surfaces to be converted into the film.
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Further Reading
Useful Texts
Physical Chemistry (5th Edition), Peter Atkins, Freeman 1996 (ISBN 0–7167–2402–2)
Introduction to Organic Chemistry, A. Stretweiser and C. Heathcock, MacMillan 1981 (ISBN 0–02–418050–5)
Electronic Structure and the Properties of Solids, Walter A. Harrison, Freeman 1980 (ISBN 0–7167–1000–5)
Thermochemical Kinetics, Sidney Benson, Wiley 1976 (ISBN 0–471–06781–4)
Structure
“The Response of Electrons to Structural Changes” K. Wiberg et al , Science v. 252 p. 1266 (1991)
Thermodynamic Data
NIST JANAF Thermochemical Tables (Journal of Physical and Chemical Reference Data. Monograph, No. 9), 4th Edition; American Chemical Society 1998 (ISBN 1–563–96831–2 )
Thermochemical Data of Pure Substances, 3rd Edition, I. Bann and G. Platzki, Wiley 1997 (ISBN 3–527–28745–0)
Equilibrium Compositional Modeling
“The Element Potential Method for Chemical Equilibrium Analysis: Implementation in the Interactive Program STANJAN” (version 3), W. Reynolds, Stanford University, January 1986, and references therein
“Equilibrium Predictions of the Role of Organosilicon Compounds in the Chemical Vapor Deposition of Silicon Carbide” M. Allendorf , J. Electrochem. Soc. 140 747 (1993)
“Predicting the Chemistry in CVD systems” K. Spear and R. Dirkx, in CVD of Refractory Metals and Ceramics, Boston, Nov 29 1989, ed. Bcsmann and Gallois, MRS 168, p. 49
“Thermodynamic modeling of selective chemical vapor deposition processes in microelectronic silicon” R. Madar and C. Bernard, J Vac Sci Technol A8 1413 (1990)
Surface Chemistry
“Surface Chemistry” John Yates (U. Pittsburgh) , Chemical & Engineering News, March 30, 1992 p. 22
Conformal Deposition
“Two precursor model for low-pressure chemical vapor deposition of silicon dioxide from tetraethylorthosilicate” M. IslamRaja, C. Chang, J. McVittie, M. Cappelli, and K. Saraswat [Stanford University] J. Vac. Sci. Technol. B11 720 (1993)
Kinetics and Mechanisms
“Gas Phase Reactions Relevant to Chemical Vapor Deposition: Numerical Modeling” D. Burgess and M. Zachariah in CVD of Refractory Metals and Ceramics, Boston, Nov 29 1989, ed. Besmann and Gallois, MRS 168, p. 31
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© 2003 Springer Science+Business Media Dordrecht
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Dobkin, D.M., Zuraw, M.K. (2003). Chemistry for CVD. In: Principles of Chemical Vapor Deposition. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-0369-7_5
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DOI: https://doi.org/10.1007/978-94-017-0369-7_5
Publisher Name: Springer, Dordrecht
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