Abstract
The boron carbides are refractory icosahedral boron-rich solids composed of twelve-atom boron rich icosahedral clusters directly linked by covalent bonds and indirectly linked through multiatom chains. The intericosahedral bonding is stronger and stiffer than that within icosahedra. The boron carbides exist as a single phase between about 9 atomic % and somewhat less that 20 atomic % carbon as boron and carbon substitute for one another within an essentially regular lattice structure. The electronic and thermal transport properties of the boron carbides are distinctive. The electronic carriers are small singlet bipolarons. Despite their exceptional hardness, these materials manifest very low thermal conductivities. These transport properties are explained in terms of distinctive features of these materials.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
Emin, D. (Jan. 1987) Phys. Today, 40, p. 55.
Wannier, G. H. (1959) Elements of Solid State Theory ( Cambridge, New York ), pp. 245–256.
Morosin, B., Mullendore, A. W., Emin, D. and Slack, G. A. (1986) in Boron Rich Solids (AIP Conf. Proc. 140), D. Emin, T. L. Aselage, C. L. Beckel, I. A. Howard, C. Wood, eds., ( AIP, New York ) p. 70.
Longuet-Higgens, H. C. and Roberts, M. de V. (1955) Proc. R. Soc. London, Ser. A 230, 110.
Emin, D. (1986) in Boron Rich Solids (AIP Conf. Proc. 140), D. Emin, T. L. Aselage, C. L. Beckel, I. A. Howard, C. Wood, eds., ( AIP, New York ) p. 189.
Venturini, E. L., Azevedo, L. J., Emin, D. and Wood, C. (1986) in Boron Rich Solids (AIP Conf. Proc. 140), D. Emin, T. L. Aselage, C. L. Beckel, I. A. Howard, C. Wood, eds., ( AIP, New York ) p. 292.
Venturini, E. L., Emin, D. and Aselage, T. L. (1987) in Novel Refractory Semiconductors, D. Emin, T. L. Aselage and C. Wood, eds., ( MRS, Pittsburgh ) pp. 57–62.
Emin, D. (1988) Phys. Rev. B, 38, 6041.
Aselage, T. L. and Tissot, R. G. (to be published).
Tallant, D. R., Aselage, T. L., Campbell, A. N. and Emin, D. (1988) J. Noncrystalline Solids, 106, 370.
Tallant, D. R., Aselage, T. L., Campbell, A. N. and Emin, D. (1989) Phys. Rev. B, 40, 5649.
Gieske, J. H., Aselage, T. L. and Emin, D. (1990) Phys. Rev. B, (to be published).
Miller, A. and Abrahams, E. (1960) Phys. Rev., 120, 745.
Emin, D. (1974) Phys. Rev. Lett., 32, 303.
Emin, D. (1975) Adv. Phys., 24, 305.
Gorham-Bergeron, E. and Emin, D. (1977) Phys. Rev. B, 15, 3667.
Emin, D. (1976) in Physics of Structually Disordered Solids, S.S. Mitra, ed. ( Plenum, New York ). pp. 385–410.
Emin, D. (1982) Phys. Today, 35 (June), 34.
Emin, D. (1973) Adv. Phys., 22, 57.
Emin, D. (1983) Comments on Solid-State Physics, 11, 35.
Emin, D., Hillery, M. S. and Liu, N. L. (1987) Phys. Rev. B, 35, 641.
Emin, D. (1985) in Localization and Metal-Insulator Transitions, H. Fritzsche and D. Adler, eds. ( Plenum, New York ) pp. 323–335.
Toyozawa, Y. (1961) Prog. Theor. Phys., 26, 29.
Emin, D. and Holstein, T. (1976) Phys. Rev. Lett., 36, 323.
Golikova, O. A. (1984) Phys. Stat. Solidi A, 86, K51.
Golikova, O. A. (1987) in Novel Refractory Semiconductors, D. Emin, T. L. Aselage and C. Wood, eds., ( MRS, Pittsburgh ) pp. 17–26.
Wood, C. and Emin, D. (1985) Phys. Rev. B, 29, 4582.
Bouchacourt, M. and Thevenot, F. (1981) J. Less-Common Metals, 82, 219.
Wood, C. (1986) in Boron Rich Solids (AIP Conf. Proc. 140) D. Emin, T. L. Aselage, C. L. Beckel, I. A. Howard, C. Wood, eds., ( AIP, New York ) p. 206.
Emin, D. and Holstein, T. (1969) Ann. Physics (N.Y.), 53, 439.
Azevedo, L. J., Venturini, E. L., Emin, D. and Wood, C. (1985) Phys. Rev. B, 32, 7970.
Schilgaarde, M. Van and Harrison, W. A. (1985) Phys. Chem. Solids, 46, 1093.
Aselage, T. L., to be published.
Emin, D. (1975) Phys. Rev. Lett., 35, 882.
Emin, D. (1976) in Physics of Structually Disordered Solids, S. S. Mitra, ed. (Plenum, New York) pp. 461–506..
Weber, W. J., Griffin, C. W. and Bates, J. L. (1986) J. Mat. Res. 1, 675.
Samara, G. A., Emin, D. and Wood, C. (1985) Phys. Rev. B, 32, 2315.
Dolezalek, F. K. and Spear, W. E. (1970), J. Noncryst. Solids, 4, 97
Wood, C., Emin, D., and Gray, P. E. (1985) Phys. Rev. B 31, 6811.
Wood, C., Aselage, T. L., and Emin, D. to be published.
Emin, D. (to be published).
Emin, D, Howard, I. A., Green, T. A., and Beckel, C. L. (1987) in Novel Refractory Semiconductors, D. Emin, T. L. Aselage and C. Wood, eds., ( MRS, Pittsburgh ) pp. 83–88.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1990 Kluwer Academic Publishers
About this chapter
Cite this chapter
Emin, D. (1990). Theory of Electronic and Thermal Transport in Boron Carbides. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_40
Download citation
DOI: https://doi.org/10.1007/978-94-009-2101-6_40
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-7444-5
Online ISBN: 978-94-009-2101-6
eBook Packages: Springer Book Archive