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Layer Transfer by Bonding and Laser Lift-Off

  • Chapter
Wafer Bonding

Part of the book series: Springer Series in MATERIALS SCIENCE ((SSMATERIALS,volume 75))

Abstract

Monolithic integration by sequential deposition, lithographic patterning, and etching of metal, dielectric and semiconductor thin films has been the dominant manufacturing scheme throughout the history of the integrated circuit. This manufacturing paradigm has been adapted to the fabrication of Micro-Electro-Mechanical Systems (MEMS), active-matrix displays, read/write heads for disk drives and optoelectronic devices. Although this single-substrate approach is scalable and inherently cost-effective, there are some materials systems, functionalities and device designs that cannot be realized in this manner. The ideal growth substrate for a specific thin-film heterostructure may not be the ideal substrate from the standpoint of heat extraction, mechanical properties, thermomechanical behavior, optical transparency, electrical conductivity or chemical compatibility. In these cases, the growth substrate must be removed, although it is not always practical to do so by mechanical or chemical means alone. In the longer term, it may be desirable to integrate thin-film heterostructures grown separately on several growth substrates onto a single platform. As IC scaling approaches an era of saturation, the focus is gradually turning to the challenge of intimately integrating a broad spectrum of high-performance materials to enhance the functionality of microsystems. The ability to transfer thin-film heterostructures from one substrate to another is central to both advanced packaging and heterogeneous integration.

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  1. T. D. Sands
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  2. W. S. Wong
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  3. N. W. Cheung
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  1. Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany

    Marin Alexe  & Ulrich Gösele  & 

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Sands, T.D., Wong, W.S., Cheung, N.W. (2004). Layer Transfer by Bonding and Laser Lift-Off. In: Alexe, M., Gösele, U. (eds) Wafer Bonding. Springer Series in MATERIALS SCIENCE, vol 75. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-10827-7_11

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  • DOI: https://doi.org/10.1007/978-3-662-10827-7_11

  • Publisher Name: Springer, Berlin, Heidelberg

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