Abstract
The most recent, experimentally determined version of the phase diagram for the W-Si system is shown in Fig. 126. It is based on differential thermal analysis (DTA), X-ray, and microscopic studies as well as hardness measurements on W-Si alloy samples prepared by arc melting single-crystal Si with metal-ceramic (99.6% pure) or electron-beam-melted W [1]. However, the data points in the W rich region are consistently lower than the results of earlier investigations [2 to 9]. These results are the main basis of the assessed phase diagram in Fig. 127 from the recent review [10]. For previously reported phase diagrams and reviews see [11 to 22]. Thermochemical data and lattice stability values of the pure elements were coupled to compute a phase diagram for, and an analytical description of, the W-Si system [23]. A thermodynamic evaluation of the W-Si system was carried out using a one-lattice substitutional model to describe the Gibbs energy of the solution phases in the system. It was found that the phase diagram according to [1] could be represented by simple thermodynamic models and seemed to be consistent with the existing thermodynamic properties of the compounds, while the other set of phase diagram data presented great difficulties in this respect [24]; see also the table on p. 156. Second-order polynomial equations for the solidus and liquidus at the W-rich end of the phase diagram were derived from existing phase diagram data and measured equilibrium distribution coefficients [25].
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Kocherzhinskii, Yu. A.; Kulik, O. G.; Shishkin, E. A.; Yupko, L. M. (Dokl. Akad. Nauk SSSR, 212 [1973] 642–43;]
Kocherzhinskii, Yu. A.; Kulik, O. G.; Shishkin, E. A.; Yupko, L. M. Doklady Chem. [Engl. Transi.] 212 [1973] 782–4).
Brewer, L; Searcy, A. W.; Templeton, D. H.; Dauben, C. H. (J. Am. Ceram. Soc. 33 [1950] 291–4).
Kieffer, R.; Benesovsky, F.; Gallistl, E. (Z. Metallk. 43 [1952] 284–91).
Blanchard, R.; Cueilleron, J. (C. R. Hebd. Seances Acad. Sci. 244 [1957] 1782–85).
Matyushenko, N. N.; Efimenko, L. N.; Solopikhin, D. P. (Fiz. Metal. Metalloved. 8 [1959] 878–80;
Matyushenko, N. N.; Efimenko, L. N.; Solopikhin, D. P. Phys. Met. Metallogr. [Engl. Transi.] 8 No. 6 [1959] 67–9).
Obrowski, W. (J. Inst. Metals 89 [1960–61] 79–80).
Efimenko, L. N.; Verkhorobin, L. F.; Matyushenko, N. N. (Izv. Akad. Nauk SSSR, Met. 1965 No. 4, 163–7; Russ. Metall. [Engl. Transi.] 1965 No. 4, 113–8).
Maksimov, V. A.; Shamrai, F. I. (Izv. Akad. Nauk SSSR, Neorg. Mater. 5 [1969] 1136–7;
Maksimov, V. A.; Shamrai, F. I. Inorg. Mater. [Engl. Transi.] 5 [1969] 965–6).
Zotov, Yu. P.; Kroshkina, N. N.; Bukharin, V. E. (Izv. Akad, Nauk SSSR, Neorg. Mater. 16 [1980] 842–5;
Zotov, Yu. P.; Kroshkina, N. N.; Bukharin, V. E. Inorg. Mater. [Engl. Transi.] 16 [1980] 584–7).
Naidu, S. V. N.; Sriramamurthy, A. M.; Rao, P. R. (J. Alloy Phase Diagrams 5 No. 3 [1989] 149–58).
Samsonov, V. G.; Umanskii, Ya. S. (Tverd. Soedin. Tugoplavkikh Metallov, Metallurgiz- dat, Moscow 1957, pp. 354–6).
Hansen, M.; Anderko, K. (Constitution of Binary Alloys, McGraw-Hill, New York 1958, pp. 1203–4).
Samsonov, G. V. (Silicides and Their Technical Uses, Izdat. Akad. Nauk Ukr. SSR, Kiev 1959, pp. 92–5).
Vol, A. E. (Structure and Properties of Binary Metal Systems, Fizmatgiz, Moscow 1962, pp. 409–14).
Elliott, R. P. (Constitution of Binary Alloys, 1st Suppl., McGraw-Hill, New York 1965, pp. 821–2).
Shunk, F. A. (Constitution of Binary Alloys, 2nd Suppl., McGraw-Hill, New York 1969, pp. 684–5).
Metals Handbook (Metallography, Structures, and Phase Diagrams, 8th Ed., Vol. 8, American Society for Metals, Metals Park, Ohio, 1973, pp. 335, 375).
Chart, T. G. (Met. Sci. 9 [1975] 504–9).
Samsonov, G. I.; Vinitskii, I. M. (Handbook of Refractory Compounds, Plenum, New York 1980, 555 pp.).
Raynor, G. V.; Rivlin, V. G. (Int. Met. Rev. 26 [1981] 213–49; C.A. 95 [1981] No. 193096).
Murarka, S. P. (Silicides for VLSI Applications, Academic, New York 1983, 200 pp.).
Massalski, T. B. (Binary Alloy Phase Diagrams, American Society for Metals, Metals Park, Ohio, 1986, pp. 2062–3).
Kaufman, L. (CALPHAD: Comput. Coupling Phase Diagrams Thermochem. 3 No. 1 [1979] pp. 45–76, 45–6, 73–6).
Vahlas, C; Chevalier, P. Y.; Blanquet, E. (CALPHAD: Comput. Coupling Phase Diagrams Thermochem. 13 [1989] 273–92).
Drapala, J.; Kuchár, L. (Sb. Ved. Pr. Vys. Sk. Banské Ostrave, Rada Hutn. 29 [1983] 1–9; C.A. 101 [1984] No. 175933).
Gong, S. F.; Hentzell, H. T. G. (J. Appl. Phys. 68 [1990] 4542–9).
Blokha, V. B.; Gladkikh, N. T.; Glushko, P. I.; Zmii, V. I.; Kartmazov, G. N.; Poltavtsev, N. S. (Izv. Akad. Nauk SSSR, Neorg. Mater. 18 [1982] 805–8;
Blokha, V. B.; Gladkikh, N. T.; Glushko, P. I.; Zmii, V. I.; Kartmazov, G. N.; Poltavtsev, N. S. Inorg. Mater. [Engl. Transi.] 18 [1982] 677–80).
Kocherzhinskii, Yu. A.; Kulik, O. G.; Shishkin, E. A.; Yupko, I. M. (Therm. Anal. Proc. 4th Int. Conf., Budapest 1974 [1975], Vol. 1, pp. 425–32; C.A. 87 [1977] No. 29813).
Grinthal, R. D. (J. Electrochem. Soc. 107 [1960] 59–61).
Beaver, W.; Stonehouse, A. J.; Paine, R. M. (Plansee Proc. 5th Seminar, Reutte–Tyrol 1964 [1965], pp. 682–700).
Parthé, E.; Schachner, H.; Nowotny, H. (Monatsh. Chem. 86 [1955] 182–5).
Aronsson, B. (Acta Chem. Scand. 9 [1955] 137–40).
Lahav, A.; Wu, C. S.; Baiocchi, F. A.; Sheng, T. T. (Semicond.-Based Heterostruct.: Interfacial Struct. Stab., Proc. Northeast Reg. Meet. Metall. Soc. 1986 147–54; C.A. 107 [1987] No. 68423).
Thomas, R. E.; Perepezko, J. H.; Wiley, J. D. (Appl. Surf. Sci. 26 [1986] 534–41).
Ottaviani, G.; Tu, K. N.; Mayer, J. W. (Phys. Rev. Lett. 44 [1980] 284–7).
Verkhorobin, L. F.; Ivanov, V. E.; Matyushenko, N. N.; Nechiporenko, E. P.; Pagachev, N. S.; Somov, A. I. (Fiz. Metal. Metalloved. 13 [1962] 77–81;
Verkhorobin, L. F.; Ivanov, V. E.; Matyushenko, N. N.; Nechiporenko, E. P.; Pagachev, N. S.; Somov, A. I. Phys. Met. Metallogr. [Engl. Transi.] 13 [1962] 67–71).
Murarka, S. P.; Read, M. H.; Doherty, C. J.; Fraser, D. B. (J. Electrochem. Soc. 129 [1982] 293–301).
Nowotny, H.; Brukl, C; Benesovsky, F. (Monatsh. Chem. 92 [1961] 116–27).
Bayerl, P.; Eichinger, P. (RS 03–75, Institut f. Festkörpertechnologie, München 1975).
Eichinger, P.; Sauermann, H.; Wahl, M. (Ion Beam Surf. Layer Anal. [Proc. Int. Conf.] 1975 [1976], Vol. 1, pp. 353–62; C.A. 86 [1977] No. 181578).
Kornilov, L.L.; Matveeva, N. M.; Pryakhina, D. I.; Polyakova, R. S. (Metallokhim. Svoistva Elementov Period. Systemy (Metal-chemical Properties of the Elements of the Periodic System) Izd. Nauk, Moscow 1966; C.A. 68 [1968] No. 16365).
Zibuts, Yu. A.; Paritskii, L. G.; Ryvkin, S. M. (Fiz. Tverd. Tela 5 [1964] 3301–4;
Zibuts, Yu. A.; Paritskii, L. G.; Ryvkin, S. M. Soviet Phys. Solid State 5 [1964] 2416–9).
Wada, T.; Takeda, M. (Nagoya Kogyo Daigaku Gakuho 36 [1985] 113–25; C.A. 104 [1986] No. 160090).
Fistul, V. I.; Shmugurov, V. A. (Fiz. Tekh. Poluprovodn. [Leningrad] 23 [1989] 688–92; C.A. 111 [1989] No. 84826).
Borders, J. A.; Sweet, J. N. (Appl. Ion Beams Met. Int. Conf., Albuquerque 1973 [1974], pp. 179–91; C.A. 82 [1975] No. 103761).
Gelain, C; Cassuto, A.; LeGoff, P. (Bull Soc. Fr. Ceram. 80 [1968] 23–7).
Efimov, Yu. V.; Frolova, T. M.; Bodak, O. I.; Kharchenko, O. I. (Izv. Akad. Nauk SSSR, Neorg. Mater. 20 [1984] 1593–5;
Efimov, Yu. V.; Frolova, T. M.; Bodak, O. I.; Kharchenko, O. I. Inorg. Mater. [Engl. Transi.] 20 [1984] 1374–6).
Neverov, V. V.; Burov, V. N. (Izv. Sib. Otd. Akad. Náuk SSSR Ser. Khim. Nauk 1979 No. 4, pp. 3–8; C.A. 91 [1979] No. 203612).
Zmii, V. I.; Seryugina, A. S. (Zashch. Pokrytiya Met. No. 2 [1968] 195–201 ; Prot. Coat. Met. [Engl. Transi.] No. 2 [1970] 158–63).
Zmii, V. I.; Kartmazov, G. N.; Poltavtsev, N. S.; Semenov, N. A. (Izv. Akad. Nauk SSSR Neorg. Mater. 17 [1981] 916–7;
Zmii, V. I.; Kartmazov, G. N.; Poltavtsev, N. S.; Semenov, N. A. Inorg. Mater. [Engl. Transi.] 17 [1981] 654–5).
Bogdanov, E. I.; Larikov, L. N.; Maksimenko, E. A. (Metallofizika Akad. Nauk Ukr. SSR Otd. Fiz. Astron. 10 No. 2 [1988] 116–8; C.A. 109 [1988] No. 41996).
Popov, V. S.; Khoklov, V. P.; Alimov, S. A.; Titukh, Yu. I.; Noga, N. A.; Romanovskii, V. F. (Zharostoikie Pokrytiya Zashch. Konstr. Mater. Tr. 7th Soveshch., Kalinin 1975 [1977], pp. 184–8; C.A. 88 [1978] No. 175345).
Zmii, V. I. (Zashch. Pokrytiya Met. No. 11 [1977] 14–8; C.A. 88 [1978] No. 10746).
Bartlett, R. W.; Gage, P. R. (ASD-TDR-63–753 — Pt. II [1964] 136 pp., 5–48,124–7; N.S.A. 19 [1965] No. 7848).
Gage, P. R.; Bartlett, R. W. (Trans. Met. Soc. AIME 233 [1965] 832–4).
Baglin, J.; Dempsey, J.; Hammer, W.; D’Heurle, F.; Petersson, S.; Serrano, C. (J. Electron. Mater. 8 [1979] 641–61).
Verkhorobin, L. F.; Ivanov, V. E.; Matyushenko, N. N.; Nechiporenko, E. P.; Pagachev, N. S.; Somov, A. I. (Fiz. Met. Metalloved. 13 [1962] 77–81;
Verkhorobin, L. F.; Ivanov, V. E.; Matyushenko, N. N.; Nechiporenko, E. P.; Pagachev, N. S.; Somov, A. I. Phys. Met. Metallogr. [Engl. Transi.] 13 [1962] 67–71).
Zmii, V. I.; Glushko, P. I.; Trofimov, V. F. (Izv. Akad. Náuk SSSR Neorg. Mater. 17 [1981] 644–6;
Zmii, V. I.; Glushko, P. I.; Trofimov, V. F. Inorg. Mater. [Engl. Transi.] 17 [1981] 427–9).
Zmii, V. I.; Efimenko, L. N.; Poltavtsev, N. S.; Snezhko, I. A. (Zashch. Met. 20 No. 1 [1984] 141–3;
Zmii, V. I.; Efimenko, L. N.; Poltavtsev, N. S.; Snezhko, I. A. Prot. Met. [Engl. Transi.] 20 [1984] 123–4).
Poltavtsev, N. S.; Zmii, V. L; Snezhko, I. A. (Izv. Akad. Nauk SSSR Neorg. Mater. 16 [1980] 674–7;
Poltavtsev, N. S.; Zmii, V. L; Snezhko, I. A. Inorg. Mater. [Engl. Transi.] 16 [1980] 464–6).
Goetzel, C. G.; Landler, P. (WADD-TR-60–825; AD-258574 [1960] 1–42; N.S.A. 15 [1961] No. 23986).
Nolting, H. I.; Jeffreys, R. A. (N 63–21802; ASD-TDR-63–459 [1963] 1–140, 23,121; C. A. 60 [1964] 6560).
Zotov, Yu. P.; Davydova, A. D.; Kroshkina, N. N.; Gorlov, V. I.; Ablogin, M. I. (Izv. Akad. Náuk SSSR Neorg. Mater. 14 [1978] 879–83;
Zotov, Yu. P.; Davydova, A. D.; Kroshkina, N. N.; Gorlov, V. I.; Ablogin, M. I. Inorg. Mater. [Engl. Transi.] 14 [1978] 688–92).
Goetzel, C. G.; Landler, P. (Planseeber. Pulvermet. 9 [1961] 36–8).
Burykina, A. L.; Dyadykevich, Yu. V.; Sosnovskii, L. A.; Epik, A. P.; Gorskii, V. V. (Izv. Akad. Náuk SSSR Met. 1975 No. 1, pp. 153–7; Russ. Metall. [Engl. Transi.] 1975 No. 1, pp. 126–9).
Samsonov, G. V.; Solonnikova, L. A. (Fiz. Met. Metalloved. 5 [1957] 565–6;
Samsonov, G. V.; Solonnikova, L. A. Phys. Met. Metallogr. [Engl. Transi.] 5 No. 3 [1957] 177; C.A. 1958 19804).
Bartlett, R. W.; Gage, P. R.; Larssen, P. A. (Trans. Metall. Soc. AIME 230 [1964] 1528–34).
Zmii, V. I.; Glushko, P. I.; Trofimov, V. F. (Izv. Akad. Nauk SSSR Neorg. Mater. 13 [1977] 1896–7;
Zmii, V. I.; Glushko, P. I.; Trofimov, V. F. Inorg. Mater. [Engl. Transi.] 13 [1977] 1525–6).
Nicki, J. J.; Koukoussas, J. D. (J. Less-Common Met. 23 [1971] 73–81).
Sosnovskii, L. A.; Saplina, G. S. (Zashch. Pokrytiya Met. No. 19 [1985] 3–5; C.A. 104 [1986] No. 134172).
Dzyadykevich, Yu. V. (Izv. Akad. Nauk SSSR Met. 1977 No. 3, pp. 182–7; Russ. Metali. [Engl. Transi.] 1977 No. 3, pp. 156–60).
Maas, J. H.; Rieck, G. D. (High Temp. High Pressures 10 No. 3 [1978] 297–304).
Zmii, V. I. (Fiz. Khim. Obrab. Mater. 1986 No. 3, pp. 96–101 ; C.A. 105 [1986] No. 83544).
Matteazzi, P. (Ceramurgia 20 No. 6 [1990] 227–33; C.A. 115 [1991] No. 55173).
Matteazzi, P.; LeCaer, G.; Bauer-Grosse, E. (Mater. Sci. Monogr. B 66 [1991] 793–802; C.A. 115 [1991] No. 261793).
Kyono, L; Sugano, M.; Nagase, R.; Hosaka, K.; Kato, A. (Jpn. Kokai Tokkyo Koho 62–171911 [87–171911] [1986–1987] 5 pp.; C.A. 107 [1987] No. 157691).
Sasahara, T.; Someno, M.; Nagasaki, H. (Nippon Kinzoku Gakkaishi 23 [1959] 30–4; C.A. 60 [1964] 3711).
Samsonov, G. V.; Kovalchenko, M. S.; Verkhoglyadova, T. S. (Zh. Neorg. Khim. 4 [1959] 2759–65;
Samsonov, G. V.; Kovalchenko, M. S.; Verkhoglyadova, T. S. Russ. J. Inorg. Chem. [Engl. Transi.] 4 [1959] 1276–9).
Sawada, S.; Kuroki, M.; Kanano, O. (Jpn. Kokai Tokkyo Koho 63–179028 [88–179028] [1987–88] 5 pp.; C.A. 109 [1988] No. 214764).
Kostikov, V. I.; Levin, N. P.; Levin, V. Ya. (Izv. Akad. Nauk SSSR Neorg. Mater. 5 [1969] 152–4;
Kostikov, V. I.; Levin, N. P.; Levin, V. Ya. Inorg. Mater. [Engl. Transi.] 5 [1969] 123–6).
Ilyushchenko, N. G.; Anfinogenov, A. I.; Belyaeva, G. I.; Plotnikova, A. F.; Kornilov, N. I. (Zharostoikie Teplostoikie Pokrytiya Tr. 4th Vses. Soveshch., Leningrad 1968 [1969], pp. 105–20; C.A. 72 [1970] No. 103156).
Belyaeva, G. I.; Anfinogenov, A. I.; Plotnikova, A. F.; Ilyushchenko, N. G. (Tr. Inst. Elektrokhim. Ural. Nauchn. Tsentr Akad. Nauk SSSR No. 26 [1978] 40–2; C.A. 92 [1980] No. 133460).
Cook, N. C (U.S. 3024177 [1959–62]; C.A. 56 [1962] 15292).
Dzyadykevich, Yu. V.; Medyukh, R. M.; Gorskii, V. V.; Iofan, A. A.; Starodubtsev, Yu. Ya.; Reznikov, V. S. (Izv. Akad. Nauk SSSR Met. 1980 No. 4, pp. 203–6; C.A. 93 [1980] No. 136291).
Obukhov, A. P.; Gurin, V. N.; Kozlova, I. R.; Terent’eva, Z. P.; Mazina, T. I. (Izv. Akad. Nauk SSSR Neorg. Mater. 4 [1968] 527–31 ;
Obukhov, A. P.; Gurin, V. N.; Kozlova, I. R.; Terent’eva, Z. P.; Mazina, T. I. Inorg. Mater. [Engl. Transi.] 4 [1968] 452–5).
Anfinogenov, A. I.; Ilyushchenko, N. G.; Belyaeva, G. I.; Finkelshtein, S. D. (Tr. Inst. Elektrokhim. Ural. Fil. Akad. Nauk SSSR 1968 No. 11, pp. 67–71; Electrochem. Molten Solid Electrolytes 8 [1970] 51–5).
Zmii, V. I.; Kovtun, N. V.; Matyukhina, L. G. (Poverkhnost 1989 No. 8, pp. 148–53; C.A. 111 [1989] No. 199747).
Tsirlin, M. S.; Bakhtina, I. P. (Izv. Akad. Nauk SSSR Met. 1989 No. 2, pp. 141–5; C.A. 110 [1989] No. 217367).
Ivanov, V. E.; Nechiporenko, E. P.; Krivoruchko, V. M.; Mitrofanov, A. S. (Fiz. Met. Metalloved. 17 [1964] 862–5;
Ivanov, V. E.; Nechiporenko, E. P.; Krivoruchko, V. M.; Mitrofanov, A. S. Phys. Met. Metallogr. [Engl. Transi.] 17 No. 6 [1964] 62–5).
Ivanov, V. E.; Nechiporenko, E. P.; Zmii, V. I.; Krivoruchko, V. M. (in: Samsonov, G. V.; Diffusion Cladding of Metals, Naukova Dumka, Kiev 1965, pp. 29–35).
Prokoshkin, D. A.; Arzamosov, B. N.; Ryabchenko, E. V. (in: Samsonov, G. V.; Diffusion Cladding of Metals, Naukova Dumka, Kiev 1965, pp. 25–8).
Kuznetsov, G. M.; Latysheva, Z. R. (Izv. Vyssh. Uchebn. Zaved. Tsvetn. Metall. 1968 No. 5, pp. 92–5; C.A. 70 [1969] No. 31269).
Fenochka, B. V.; Gordienko, S. P.; Sosnovskii, L. A. (Zashch. Pokrytiya Met. No. 24 [1990] 11–4; C.A. 114 [1991] No. 211923).
Tsirlin, M. S.; Zakharova, L. I. (Zashch. Pokrytiya Met. No. 15 [1981] 3–6; C.A. 96 [1982] No. 221 757).
Weng, S. L. (Phys. Rev. B Condens. Matter 29 [1984] 2363–5).
Goetzel, C. G.; Venkatesan, P. S.; Bunshah, R. F. (WADC-TR-59–405 [1960] 57 pp.; N.S.A. 14 [1960] No. 15024).
Cabrera, A. L.; Kirner, J. F.; Miller, R. A.; Pierantozzi, R.; Armor, J. N. (U.S. 4822642 [1985–89] 15 pp.; C.A. 111 [1989] No. 158757).
Bomchil, G.; Goeltz, G.; Torres, J. (Thin Solid Films 140 [1986] 59–70).
Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J. (J. Vac. Sci. Technol. 16 [1979] 13–9).
Campisi, G. J.; Bevolo, A. J.; Shanks, H. R.; Schmidt, F. A. (J. Appl. Phys. 53 [1982] 1714–9).
Racette, G. W.; Frost, R. T. (J. Cryst. Growth 47 [1979] 384–8).
Boiko, B. A.; Gorodetskii, D. A.; Yas’ko, A. A. (Fiz. Tverd. Tela [Leningrad] 15 [1973] 3145–53;
Boiko, B. A.; Gorodetskii, D. A.; Yas’ko, A. A. Sov. Phys. Solid State [Engl. Transi.] 15 [1974] 2101–6).
Swenson, O. F.; Sinha, M. K. (J. Vac. Sci. Technol. 9 [1972] 942–6).
Janssen, A. P.; Jones, J. P. (Surf. Sci. 41 [1974] 257–76).
Janssen, A. P.; Jones, J. P. (Thin Solid Films 28 [1975] L25–L28).
Nishikawa, O.; Tsunashima, Y.; Nomura, E.; Hone, S.; Wada, M.; Shibata, M.; Yoshimura, T.; Uemori, R. (J. Vac. Sci. Technol. B 1 [1983] 6–9).
Nishikawa, O.; Tsunashima, Y.; Nomura, E.; Wada, M.; Horie, S.; Shibata, M.; Yoshimura, T.; Uemori, R. (Surf. Sci. 126 [1983] 529–33).
Tsong, T. T.; Wang, S. C; Liu, F. H.; Cheng, H.; Ahmad, M. (J. Vac. Sci. Technol. B 1 [1983] 915–22).
Tsong, T. T. (Nucl. Instrum. Methods Phys. Res. 218 [1983] 383–90).
Tsong, T. T. (Mater. Res. Soc. Symp. Proc. 25 [1984] 363–74; C.A. 101 [1984] No. 101342).
Wrigley, J. D.; Ehrlich, G. (Mater. Res. Soc. Symp. Proc. 48 [1985] 47–53; C.A. 104 [1986] No. 24710).
Ageev, V. N.; Afanas’eva, E. Yu.; Gali, N. R.; Mikhailov, S. N.; Rutkov, E. V.; Tontegode, A. (Pis’ma Zh. Tekh. Fiz. 12 No. 9 [1986] 565–70; C.A. 105 [1986] No. 30609).
Ageev, V. N.; Afanas’eva, E. Yu.; Gali, N. R.; Mikhailov, S. N.; Rutkov, E. V.; Tontegode, A. Ya. (Poverkhnost 1987 No. 5, pp. 7–14; C.A. 107 [1987] No. 13357).
Ageev, V. N.; Afanas’eva, E. Yu. (Poverkhnost 1987 No. 7, pp. 30–7; C.A. 107 [1987] No. 103418).
Ageev, V. N.; Gomoyunova, M. V.; Pronin, L I.; Khoruzhii, S. V. (Poverkhnost 1988 No. 5, pp. 57–63; C.A. 109 [1988] No. 80304).
Ageev, V. N.; Gomoyunova, M. V.; Grigor’ev, A. K.; Pronin, I. I.; Rodnyanskii, A. E. (Poverkhnost 1990 No. 8, pp. 88–93; C.A. 113 [1990] No. 139404).
Deneuville, A. (Ann. Chim. [Paris] [15] 11 [1986] 603–13).
Murarka, S. P. (Ann. Rev. Mater. Sci. 13 [1983] 117–37; C.A. 99 [1983] No. 114117).
Pauleau, Y. (Thin Solid Films 122 [1984] 243–58).
Eichinger, P.; Sauermann, H.; Wahl, M. (Ion Beam Surf. Layer Anal. Proc. Int. Conf., Karlsruhe, FRG, 1975 [1976], Vol. 1, pp. 353–62; C.A. 86 [1977] No. 181578).
Sauermann, H.; Wahl, M. (Valvo Ber. 20 No. 2 [1977] 62–80).
Kamins, T. I.; Laderman, S. S.; Coulman, D. J.; Turner, J. E. (J. Electrochem. Soc. 133 [1986] 1438–42).
Janssen, A. P.; Jones, J. P. (Thin Solid Films 28 [1975] L25–L28).
Green, M. L.; Levy, R. A. (J. Electrochem. Soc. 132 [1985] 1243–50).
Pauleau, Y.; Lami, P.; Tissier, A.; Pantel, R.; Oberlin, J. C (Thin Solid Films 143 [1986] 259–67).
Pauleau, Y.; Dassapa, F. C; Lami, P.; Oberlin, J. C; Romagna, F. (J. Vac. Sci. Technol. B 6 [1988] 817–24; C.A. 109 [1988] No. 120521).
Pauleau, Y.; Dassapa, F. C; Lami, P.; Oberlin, J. C; Romagna, F. (J. Mater. Res. 4 [1989] 156–62).
Zhang, S. L.; Buchta, R.; Oestling, M. (Mater. Res. Soc. Symp. Proc. 168 [1990] 173–8; C.A. 113 [1990] No. 101775).
Oertel, B. (Wiss. Z.-Tech. Hochsch. Ilmenau 25 No. 6 [1979] 151–6; C.A. 91 [1979] No. 150120).
Oertel, B.; Sperling, R. (Thin Solid Films 37 [1976] 185–94).
Oertel, B.; Kurze, H. J.; Haueisen, H. (Thin Solid Films 52 [1978] 129–35).
Smith, P. M.; Thompson, M. O. (Tungsten Other Adv. Met. VLSI–ULSI Appl. 5, Proc. 6th Workshop, San Mateo, Calif, and Tokyo 1989 [1990], pp. 311–6; C.A. 113 [1990] No. 156755).
Lajzerowicz, J. (ENST-86E017 [1986], ETN-87–90290 [1987] 165 pp.; C.A. 108 [1988] No. 196501).
Cros, A.; Pierrisnard, R.; Pierre, F.; Layet, J. M.; Meyer, F. (Appl. Surf. Sci. 38 [1989] 148–55).
Cros, A.; Pierrisnard, R.; Pierre, F.; Layet, J. M.; Meyer, F. (Appl. Phys. Lett. 55 [1989] 226–8).
Azizan, M.; Nguyen Tan, T. A.; Cinti, R.; Baptist, R.; Chauvet, G. (Surf. Sci. 178 [1986] 17–26).
Locker, L. D.; Capio, C. D. (J. Appl. Phys. 44 [1973] 4366–9).
Murarka, S. P.; Read, M. H.; Doherty, C. J.; Fraser, D. B. (J. Electrochem. Soc. 129 [1982] 293–301).
Santiago-Aviles, J. J. (ARO-22681.8-MS-H [1988] 10 pp.; C. A. 111 [1989] No. 200426).
Siegal, M. P.; Santiago, J. J. (J. Appl. Phys. 63 [1988] 525–9).
Siegal, M.; Santiago, J. J.; Van der Spiegel, J.; Graham, W. R.; Setton, M. (Mater. Res. Soc. Symp. Proc. 74 [1987] 673–8; C.A. 107 [1987] No. 166535).
Ting, C. Y.; Davari, B. (Appl. Surf. Sci. 38 [1989] 416–28).
Torres, J.; Pelissier, A.; Perio, A.; Oberlin, J. C; Bomchil, G. (Vide Couches Minces 42 No. 236 [1987] 91–3).
Martin, T. L.; Malhotra, V.; Mahan, J. E. (J. Electron. Mater. 13 [1984] 309–25; C.A. 100 [1984] No. 149074).
Meyer, F.; Schwebel, C; Pellet, C; Gautherin, G. (Appl. Surf. Sci. 36 [1989] 231–9; C.A. 110 [1989] No. 125839).
Khaidar, M.; Essafti, A.; Bennouna, A.; Ameziane, E. L.; Brunei, M. (J. Appl. Phys. 65 [1989] 3248–52).
Siegal, M. P.; Santiago, J. J. (J. Appl. Phys. 65 [1989] 760–6).
Paine, D. C; Bravman, J. C; Saraswat, K. (Tungsten Other Refract. Met. VLSI Appl. Proc. Workshop, Albuquerque 1984–1985 [1986], pp. 117–23; C.A. 106 [1987] No. 144664).
Shioya, Y.; Ikegami, K.; Maeda, M.; Yanagida, K. (J. Appl. Phys. 61 [1987] 561–6).
Delfino, M.; Lehrer, W. I. (J. Electrochem. Soc. 128 [1981] 1071–4).
Whitlow, H. J.; Eriksson, T.; Ötling, M.; Petersson, C. S.; Keinonen, J.; Anttila, A. (Appl. Phys. Lett. 50 [1987] 1497–9).
Shenai, K.; Lewis, N.; Smith, G. A.; McConnell, M. D.; Burrell, M. (Tungsten Other Adv. Met. VLSI–ULSI Appl. 5 Proc. 6th Workshop, San Mateo, Calif, and Tokyo 1989 [1990], pp. 317–24; C.A. 113 [1990] No. 156756).
Carlisle, J. A.; Chopra, D. R.; Dillingham, T. R.; Gnade, B.; Smith, G. (J. Appl. Phys. 65 [1989] 2313–20).
Zhang, S. L; Buchta, R.; Oestling, M. (J. Mater. Res. 6 [1991] 1886–91).
Zhang, S. L; Smith, U.; Buchta, R.; Oestling, M. (J. Appl. Phys. 69 [1991] 213–9).
Thomas, O.; Charai, A.; D’Heurle, F. M.; Finstad, T. G.; Joshi, R. V. (Thin Solid Films 171 [1989] 343–57).
Suguro, K.; Nakasaki, Y.; Shima, S.; Yoshi, T.; Moriya, T.; Tango, H. (J. Appl. Phys. 62 [1987] 1265–73).
Eriksson, T.; Carlsson, J. O.; Keinonen, J.; Petersson, C. S. (J. Appl. Phys. 64 [1988] 3229–32).
Schmitz, J. E. J.; Buiting, M. J.; Ellwanger, R. C. (Tungsten Other Refract. Met. VLSI Appl. 4 Proc. Workshop, Albuquerque 1988 [1989], pp. 27–33; C.A. 111 [1989] No. 199720).
Morosanu, C.-E.; Soltuz, V. (Thin Solid Films 52 [1978] 181–94).
Van der Jeugd, C. A.; Janssen, G. C. A. M.; Radelaar, S.; Buiting, M. J.; Wolters, R. A. M. (Tungsten Other Adv. Met. ULSI Appl. 1990 Proc. 7th Workshop, Dallas 1990 [1991], pp. 137–41; C.A. 115 [1991] No. 140465).
Ma, E.; Alvi, N. S.; Hamdi, A. H.; Nicolet, M. A. (Mater. Res. Soc. Symp. Proc. 122 [1988] 579–84; C.A. 110 [1989] No. 126555).
Siegal, M. P.; Graham, W. R.; Santiago, J. J. (J. Appl. Phys. 66 [1989] 6073–6).
Von Allmen, M.; Lau, S. S.; Sheng, T. T.; Wittmers, M. (Laser Electron Beam Process. Mater. Proc. Symp., Cambridge, Mass., 1979 [1980], pp. 524–9; C.A. 93 [1980] No. 159996).
Shibata, T.; Sigmon, T. W.; Gibbons, J. F. (Proc. Electrochem. Soc. 80–2 [1980] 533 pp., 458–68).
Shibata, T.; Sigmon, T. W.; Regolini, J. L.; Gibbons, J. F. (J. Electrochem. Soc. 128 [1981] 637–44).
Wakita, A. S.; Sigmon, T. W.; Gibbons, J. F. (Mater. Res. Soc. Symp. Proc. 13 [1983] 721–6).
Shibata, T.; Wakita, A.; Sigmon, T. W.; Gibbons, J. F. (Semicond. Semimet. 17 [1984] 341–95).
Lee, H. S.; Wolga, G. J. (J. Electrochem. Soc. 137 [1990] 684–90).
Lee, H. S.; Wolga, G. J. (J. Electrochem. Soc. 137 [1990] 2618–23).
Majni, G.; Nava, F.; Ottaviani, G.; Luches, A.; Nassisi, V.; Celotti, G. (Vacuum 32 [1982] 11–8).
Wada, T.; Takeda, M. (Nagoya Kogyo Daigaku Gakuho 36 [1985] 113–25; C.A. 104 [1986] No. 160090).
Baglin, J. E. E.; Hodgson, R. T.; Chu, W. K.; Neri, J. M.; Hammer, D. A.; Chen, L. J. (Nucí. Instrum. Methods Phys. Res. 191 [1981] 169–76; C.A. 96 [1982] No. 95843).
Bomchil, G.; Goeltz, G.; Torres, J. (Thin Solid Films 140 [1986] 59–70).
Haarsta, A.; Carlsson, J. O. (Thin Solid Films 176 [1989] 263–76).
Siegal, M. P.; Santiago, J. J. (Mater. Res. Soc. Symp. Proc. 100 [1988] 701–6; C.A. 109 [1988] No. 140180).
Silversmith, D. J.; Rathman, D. D.; Mountain, R. W. (Thin Solid Films 93 [1982] 413–9).
Deneuville, A.; Kádri, M.; Burnel, M. (Vide Couches Minces 42 No. 236 [1987] 33–5; C.A. 107 [1987] No. 87802).
Goltz, G.; Torres, J.; Lajzerowicz, J. Jr.; Bomchil, G. (Thin Solid Films 124 [1985] 19–26).
Pauleau, Y.; Lami, P.; Dassapa, F.; Romagna, F.; Oberlin, J. C. (Vide Couches Minces 42 No. 236 [1987] 163–5; C.A. 107 [1987] No. 166563).
Blewer, R. S.; Tracy, M. E. (Tungsten Other Refract. Met. VLSI Appl. Proc. Workshop, Albuquerque 1984–1985 [1986], pp. 53–62; C.A. 106 [1987] No. 166969).
Silversmith, D. J.; Rathman, D. D.; Mountain, R. W. (Mater. Res. Soc. Symp. Proc. 10 [1982] 425–31; C.A. 98 [1983] No. 208290).
Vasilev, S. V.; Gerasimenko, N. N. (Poverkhnost 1986 No. 7, pp. 57–62; C.A. 105 [1986] No. 144865).
Arena, C; Papapietro, M. (Tungsten Other Refract. Met. VLSI Appl. Proc. Worhshop, Albuquerque 1984–1985 [1986], pp. 483–95; C.A. 106 [1987] No. 147647).
Gerasimenko, N. N.; Vasilev, S. V.; Kalinin, V. V. (Nucl. Instrum. Methods Phys. Res. B 39 [1989] 259–67; C.A. 111 [1989] No. 32197).
Torres, J.; Oberlin, J. C; Bomchil, G.; Perio, A.; Levy, D.; Saulnier, A.; Ponpon, J. P.; Stuck, R. (in: Soncini, G.; Calzolari, P. U.; Solid State Devices, Elsevier, North Holland, 1988, pp. 357–61).
Torres, J.; Oberlin, J. C; Stuck, R.; Bourhila, N.; Palleau, J.; Goltz, G.; Bomchil, G. (Appl. Surf. Sci. 38 [1989] 186–94).
Maex, K.; Van den Hove, L.; DeKeersmaecker, R. F. (Thin Solid Films 140 [1986] 149–61).
Hara, T.; Chen, S. C; Ando, H. (J. Electrochem. Soc. 134 [1987] 3139–42).
Agamy, S. A.; Khalil, M. Y.; Badawi, A. A. (Isotopenpraxis 26 No. 6 [1990] 265–8; C.A. 113 [1990] No. 143127).
D’Heurle, F. M.; Petersson, C. S.; Tsai, M. Y. (J. Appl. Phys. 51 [1980] 5976–80).
Tsai, M. Y.; Petersson, C. S.; D’Heurle, F. M.; Maniscalco, V. (Appl. Phys. Lett. 37 [1980] 295–8).
D’Heurle, F. M.; Tsai, M. Y.; Petersson, C. S.; Stritzler, B. (J. Appl. Phys. 53 [1982] 3067–9).
Kwong, D. L; Meyers, D. C; Alvi, N. S.; Li, L. W.; Norbeck, E. (Appl. Phys. Lett. 47 [1985] 688–91).
Saraswat, K. C; Swirhun, S.; McVittie, J. P. (Proc. Electrochem. Soc. 84–7 [1984] 409–19; C.A. 101 [1984] No. 121173).
Mimura, H.; Inada, T. (Rep. Res. Cent. Ion Beam Technol. Hosei Univ. Suppl. No. 8 [1990] 97–102; C.A. 113 [1990] No. 32573).
Beale, M. I. J.; Deshmukh, W. G. L; Chew, N. G.; Cullis, A. G. (Physica B129 [1985] 210–4).
Kurup, M. B.; Bhagawat, A.; Prasad, K. G. (Nucl. Instrum. Methods Phys. Res. B 13 [1986] 473–8; C.A. 105 [1986] No. 47222).
Ma, E.; Lim, B. S.; Nicolet, M. A.; Alvi, N. S.; Hamdi, A. H. (J. Electron. Mater. 17 No. 3 [1988] 207–11; C.A. 109 [1988] No. 102597).
Zuhr, R. A.; Pennycook, S. J.; Haynes, T. E.; Holland, O. W. (Mater. Res. Soc. Symp. Proc. 128 [1989] 47–53; C.A. 111 [1989] No. 107063).
Deneuville, A.; Benyahya, M.; Brunei, M.; Canut, B. (J. Phys. Colloq. [Paris] 49 [1988] C4–499–C4–502; C.A. 110 [1989] No. 16787).
Deneuville, A.; Benyahya, M.; Brunei, M.; Oberlin, J. C; Torres, J.; Bourhila, N.; Paleau, J.; Canut, B. (Appl. Surf. Sci. 38 [1989] 139–47).
Torres, J.; Palleau, J.; Bourhila, N.; Oberlin, J. C; Deneuville, A.; Benyahya, M. (J. Phys. Colloq. [Paris] 49 [1988] C4–183–C4–186; C.A. 109 [1988] No. 241887).
Broadbent, E. K.; Morgan, A. E.; Flanner, J. M.; Coulman, B.; Sadana, D. K.; Burrow, B. J.; Ellwanger, R. C. (J. Appl. Phys. 64 [1988] 6721–6).
Broadbent, E. K.; Morgan, A. E.; Ellwanger, R. C; Flanner, J. M.; Coulman, B.; Sadana, D. K.; Burrow, B. J.; Gutai, L. (Tungsten Other Refract. Met. VLSI Appl. 4 Proc. Work shop, Albuquerque 1988 [1989], pp. 259–68; C.A. 111 [1989] No. 144779).
Bakli, M.; Goltz, G.; Vernet, M.; Torres, J.; Palleau, J.; Bourhila, N.; Oberlin, J. C. (Appl. Surf. Sci. 38 [1989] 441–6).
Smith, P. M.; Thompson, M. O.; Blewer, R. S. (Tungsten Other Adv. Met. ULSI Appl. 1990 Proc. 7th Workshop, Dallas 1990 [1991], pp. 297–303; C.A. 115 [1991] No. 54658).
Deneuville, A.; Benyahya, M.; Brunei, M.; Canut, B. (J. Less-Common Met. 145 [1988] 197–207).
Deneuville, A.; Mandeville, P. (Fr. Demande 2578272 [1985–1986] 14 pp.; C.A. 106 [1987] No. 77081).
Kadri, M.; Deneuville, A.; Brunei, M. (Adv. Mater. Telecommun. Pap. Symp. 13 Eur. Mater. Res. Soc. Meet., Strasbourg 1986, pp. 497–501; C.A. 108 [1988] No. 67648).
Deneuville, A.; Kadri, M.; Brunei, M. (Vide Couches Minces 42 No. 236 [1987] 37–9; C.A. 107 [1987] No. 87843).
Kadri, M.; Deneuville, A.; Brunei, M. (Proc. Conf. Ion Plat. Allied Tech. 1987 366–70).
Deneuville, A.; Kadri, M.; Brunei, M. (Proc. Int. Symp. Trends New Appl. Thin Films, Strasbourg 1987, pp. 126–30).
Canut, J. B.; Kadri, M.; Pivot, J.; Deneuville, A. (Proc. Eur. Mater. Res. Symp. 1987 491–6).
Dubois, C; Deneuville, A.; Kadri, M. (Second. Ion Mass. Spectrom. Proc. 6th Int. Conf., Versailles 1987 [1988], pp. 777–82; C.A. 111 [1989] No. 15924).
Kadri, M.; Deneuville, A.; Brunei, M. (Mater. Sci. Eng. 98 [1988] 79–84; C.A. 109 [1988] No. 97298).
Houdy, P.; Boher, P.; Schiller, C; Luzeau, P.; Barchewitz, R.; Alehyane, N.; Ouahabi, M. (Proc. SPIE-Int. Soc. Opt. Eng. 984 [1988] 95–103; C.A. 110 [1989] No. 163221).
Magee, T. J.; Woolhouse, G. R.; Kawayoshi, H. A.; Niemeyer, I. C; Rodrigues, B.; Ormond, R. D.; Bhandia, A. S. (J. Vac. Sci. Technol. [2] B 2 [1984] 756–61; C.A. 102 [1985] No. 37353).
Jiang, Z.; Jiang, X.; Liu, W.; Wu, Z. (J. Appl. Phys. 65 [1989] 196–200).
Dupuis, V.; Ravet, M. F.; Tete, C; Piecuch, M.; Vidal, B. (J. Appl. Phys. 68 [1990] 3348–55).
King, B. V.; Puranik, S. G.; MacDonald, R. J. (Nucl. Instrum. Methods Phys. Res. B 33 [1988] 657–60; C.A. 109 [1988] No. 220466).
Tsaur, B.-Y.; Anderson, C. H. Jr. (Appl. Phys. Lett. 41 [1982] 877–9).
Tsaur, B.-Y.; Anderson, C. H. Jr. (Thin Solid Films 104 [1983] 383–9).
Wang, Z.; Ding, X.; Tian, Y. (Nucl. Instrum. Methods Phys. Res. B 33 [1988] 653–6; C. A. 109 [1988] No. 221405).
Ding, X.; Wang, Z.; Qian, Y. (Vacuum 39 [1989] 243–5; C.A. 111 [1989] No. 88152).
Eicher, S.; Bruce, R. A. (Can. J. Phys. 65 [1987] 868–71; C.A. 108 [1988] No. 196504).
Ding, X.; Wang, Z.; Qian, Y. (Hejishu 10 No. 9 [1987] 15–9 from C.A. 108 [1988] No. 114775).
Choi, K. W.; Ahn, K. Y. (J. Vac. Sci. Technol. [2] A 3 [1985] 2272–7).
Blokha, V. B.; Gladkikh, N. T.; Glushko, P. I.; Zmii, V. I.; Kartmazov, G. N.; Poltavtsev, N. S. (Izv. Akad. Náuk SSSR Neorg. Mater. 18 [1982] 805–8;
Blokha, V. B.; Gladkikh, N. T.; Glushko, P. I.; Zmii, V. I.; Kartmazov, G. N.; Poltavtsev, N. S. Inorg. Mater. [Engl. Transi.] 18 [1982] 677–80).
Lo, J.-S. (Diss. Univ. Utah, Salt Lake City, Utah, 1973, 98 pp.; C.A. 80 [1974] No. 61 575).
Lo, J.-S.; Haskell, R. W.; Byrne, J. G.; Sosin, A. (Chem. Vap. Deposition 4th Int. Conf., Boston 1973, pp. 74–90; C.A. 81 [1974] No. 160230).
Saraswat, K. C; Brors, D. L.; Fair, J. A.; Monnig, K. A.; Beyers, R. (IEEE Trans. Electron Devices 30 [1983] 1497–505; C.A. 100 [1984] No. 60149).
Fang, Y. K.; Hsu, S. L. (J. Appl. Phys. 57 [1985] 2980–2).
Togei, R. (J. Appl. Phys. 59 [1986] 3582–4).
Shioya, Y.; Maeda, M. (J. Appl. Phys. 60 [1986] 327–33).
Le Goues, F. K.; D’Heurle, F. M.; Joshi, R.; Suni, I. (Mater. Res. Soc. Symp. Proc. 54 [1986] 51–6; C.A. 105 [1986] No. 88869).
Nava, F.; Riantino, G.; Galii, E. (J. Non-Cryst. Solids 104 [1988] 195–202).
Akimoto, K.; Watinabe, K. (Appl. Phys. Lett. 39 [1981] 445–7).
Akimoto, K. (Appl. Phys. Lett. 41 [1982] 49–51).
Murarka, S. P.; Read, M. H.; Chang, C. C. (J. Appl. Phys. 52 [1981] 7450–2).
Jiang, X.; Huang, Y.; Wu, Z.; Li, B. (Chin. Phys. Lett. 3 [1986] 569–72; C.A. 106 [1987] No. 187008).
Tsai, M. Y.; D’Heurle, F. M.; Petersson, C S.; Johnson, R. W. (J. Appl. Phys. 52 [1981] 5350–5).
Guo, K. J.; Wiley, J. D.; Perepezko, J. H.; Nordman, J. E.; Aaron, D. B.; Dobisz, E. A.; Madisen, D. E.; Thomas, R. E. (Proc. Conf. High Temp. Electron. Instrumentation, Houston, Tex., 1981, pp. 137–46).
Wiley, J. D.; Perepezko, J. H.; Nordman, J. E.; Guo, K.-J. (IEEE Trans. Ind. Electron. 29 No. 2 [1982] 154–7).
Wiley, J. D.; Perepezko, J. H.; Nordman, J. E. (SAND-82–7156 [1983] 37 pp.; C.A. 99 [1983] No. 162550).
Thomas, R. E.; Perepezko, J. H.; Wiley, J. D. (Appl. Surf. Sci. 26 [1986] 534–41).
Thomas, R. E.; Perepezko, J. H.; Wiley, J. D. (Mater. Res. Soc. Symp. Proc. 54 [1986] 127–32; C.A. 105 [1986] No. 163890).
Hara, T.; Takahashi, S. (Nucl. Instrum. Methods Phys. Res. B 39 [1989] 302–5; C. A. 111 [1989] No. 32162).
Sridhar, C. G.; Hodul, D. T.; Chow, R. (Tungsten Other Refract. Met. VLSI Appl. Proc. Workshop, Albuquerque 1984–1985 [1986], pp. 267–80; C.A. 106 [1987] No. 147645).
Du, Y. C; Wang, H.; Huang, W. N.; Sun, D. C; Yu, Z. Q.; Li, F. M. (Tungsten Other Refract. Met. VLSI Appl. 4 Proc. Workshop, Albuquerque 1988 [1989], pp. 307–13; C.A. 111 [1989] No. 202812).
Du, Y. C; Lu, Z.; Yu, Z. Q.; Sun, D. C; Li, F. M.; Collins, G. J. (Chin. Phys. New York 6 No. 1 [1986] 208–14).
Chen C; Zhou, H.; Cao, M.; Jiang, H.; Xu, W. (Tungsten Other Refract. Met. VLSI Appl. 4 Proc. Workshop, Albuquerque 1988 [1989], pp. 363–7; C.A. 111 [1989] No. 164896).
Crowder, B. L; Zirinsky, S. (Eur. Appl. 0317 [1979] 31 pp.; C. A. 91 [1979] No. 203172).
Ahn, K. Y.; Herd, S. R.; Baglin, J. E. E.; Han, J. U. (J. Vac. Sci. Technol. [2] A 3 [1985] 2268–71).
Lu, J.; Wu, Z. (Wuli Xuebao 38 [1989] 981–6; C.A. 111 [1989] No. 245432).
Ohnishi, T.; Yokoyama, N.; Onodera, H.; Suzuki, S.; Shibatomi, A. (Appl. Phys. Lett. 43 [1983] 600–2).
Gage, P. R.; Bartlett, R. W. (Trans. Metall. Soc. AIME 233 [1965] 832–4).
Takatani, S.; Matsuoka, N.; Shigeta, J.; Hashimoto, N.; Nakashima, H. (J. Appl. Phys. 6 [1987] 220–4).
Lahav, A. G.; Wu, C. S.; Baiocchi, F. A. (J. Vac. Sci. Technol. [2] B 6 [1988] 1785–95).
Cirillo, N. C, Jr.; Chung, H. K.; Void, P. J.; Hibbs-Brenner, M. K.; Fraasch, A. M. (J. Vac. Sci. Technol. [2] B 3 [1985] 1680–4).
Lahav, A.; Genut, M. (Mater. Sci. Eng. B 7 [1990] 231–5; C.A. 114 [1991] No. 73055).
Angilello, J.; Baglin, J.; D’Heurle, F.; Petersson, S.; Segmüller, A. (Proc.-Electrochem. Soc. 80–2 [1980] 369–84; C.A. 94 [1981] No. 200987).
Pan, P. J.; Blech, I. (J. Appl. Phys. 55 [1984] 2874–80).
McLachlan, D. R.; Avins, J. B. (Semicond. Int. 7 [1984] 129–38).
Santiago-Aviles, J. J. (ARO-22681.8-MS-H [AD-A 203428] [1988] 10 pp.; C.A. 111 [1989] No. 200426).
Siegal, M. P.; Santiago, J. J. (J. Appl. Phys. 63 [1988] 525–9).
Wei, C. S.; Van der Spiegel, J.; Setton, M.; Santiago, J.; Tanielian, M.; Blackstone, S. (Mater. Res. Soc. Symp. Proc. 52 [1986] 297–303; C.A. 105 [1986] No. 126002).
Wei, C. S.; Setton, M.; Van der Spiegel, J.; Santiago, J. (J. Appl. Phys. 61 [1987] 1429–34).
Mitsuhashi, K.; Yamazaki, O.; Ohtake, K.; Koba, M. (Jpn. J. Appl. Phys. Pt. 2 27 [1988] L2401–L2403; C.A. 110 [1989] No. 145718).
Mitsuhashi, K.; Shiozaki, K.; Yamazaki, O.; Ohtake, K.; Koba, M. (VLSI Technol. Symp., San Diego, Calif., 1988, pp. 71–2).
Mitsuhashi, K.; Yamazaki, O.; Ohtake, K.; Koba, M. (Jpn. J. Appl. Phys. Pt. 1 28 [1989] 593–7; C.A. 111 [1989] No. 164963).
Nakasaki, Y.; Suguro, K.; Shima, S.; Kashiwagi, M. (J. Appl. Phys. 64 [1988] 3263–8).
Suguro, K.; Nakasaki, Y.; Inoue, T.; Shima, S.; Kashiwagi, M. (Thin Solid Films 166 [1988] 1–14).
Suguro, K.; Nakasaki, Y.; Yoshii, T.; Itoh, T. (Appl. Surf. Sci. 41–42 [1989] 277–81).
Suguro, K.; Nakasaki, Y.; Katata, T. (Oyo Butsuri 59 [1990] 1474–8; C.A. 115 [1991] No. 219967).
Suguro, K.; Katata, T.; Nakasaki, Y.; Kunishima, I. (Tungsten Other Adv. Met. VLSI–ULSI Appl. 5 Proc. 6th Workshop, San Mateo, Calif, and Tokyo 1989 [1990], pp. 195–200; C.A. 113 [1990] No. 235606).
Suguro, K.; Nakasaki, Y.; Shima, S.; Yoshii, T.; Moriya, T.; Tango, H. (Ext. Abstr. Conf. Solid State Devices Mater. 18th [1986] 503–6; C.A. 106 [1987] No. 42155).
Yasui, Y.; Ogawa, S.; Yoshida, T.; Terui, Y. (Ext. Abstr. 19th Conf. Solid State Devices Mater., Tokyo 1987, pp. 419–22).
Shen, B. W.; Smith, G. C; Anthony, J. M.; Matyi, R. J. (J. Vac. Sci. Technol. [2] B 4 [1986] 1369–76).
Sweet, J. N. (SLA-73–1087 [1974] 45 pp.; C.A. 82 [1975] No. 33273).
Olowolafe, J. O.; Tu, K. N.; Angtlello, J. (J. Appl. Phys. 50 [1979] 6316–20).
Eizenberg, M.; Tu K. N. (J. Appl. Phys. 53 [1982] 1577–85).
Canali, C; Celotti, G.; Fantini, F.; Zanoni, E. (Thin Solid Films 88 [1982] 9–23).
Thomas, O.; Finstad, T. G.; D’Heurle, F. M. (J. Appl. Phys. 67 [1990] 2410–4).
Appelbaum, A.; Eizenberg, M.; Brener, R. (Vacuum 33 No. 4 [1983] 227–30).
Hashimoto, N.; Koga, Y. (J. Electrochem. Soc. 114 [1967] 1189–91).
Torres, J.; Perio, A.; Pantel, R.; Campidelli, Y.; Arnaud D’Avitaya, F. (Thin Solid Films 126 [1986] 233–9).
Lin, W. T.; Chen, L. J. (J. Appl. Phys. 58 [1985] 1515–8).
Lin, W. T.; Chen, L. J. (J. Appl. Phys. 59 [1986] 3481–8).
Cheng, H. C; Lin, W. T.; Chien, C. J.; Shiau, F. Y.; Chen, L. J. (Appl. Surf. Sci. 22–23 [1985] 512–9).
Chen, L. J.; Cheng, H. C; Lin, W. T.; Chou, L. J.; Fung, M. S. (Mater. Res. Soc. Symp. Proc. 37 [1985] 375–80).
Ogawa, S.; Yamazaki, K.; Akiyama, S.; Terui, Y. (Tech. Dig. Int. Electron Devices 1986 62–5).
D’Heurle, F. M.; Gas, P. (J. Mater. Res. 1 [1986] 205–21 ; C.A. 104 [1986] No. 213864).
Borders, J. A.; Picraux, S. T. (Proc. IEEE 62 [1974] 1224–31; C.A. 82 [1975] No. 118362).
Borders, J. A.; Sweet, J. N. (Appl. Ion Beams Met. Int. Conf., Albuquerque 1973 [1974], pp. 179–91; C.A. 82 [1975] No. 103761).
Chang, C. C; Quintana, G. (J. Electron Spectrosc. Relat. Phenom. 2 [1973] 363–76).
Ottaviani, G. (Thin Solid Films 140 [1986] 3–21).
Lajzerowicz, J. Jr.; Torres, J.; Goltz, G.; Pantel, R. (Thin Solid Films 140 [1986] 23–8).
Petersson, C. S.; Baglin, J. E. E.; D’Heurle, F. M.; Dempsey, J. J.; Harper, J. M. E.; Serrano, C. M.; Tsai, M. Y. (Proc.-Electrochem. Soc. 80–2 [1980] 290–310; C.A. 94 [1981] No. 200985).
Baglin, J.; Dempsey, J.; Hammer, W.; D’Heurle, F.; Petersson, S.; Serrano, C. (J. Electron. Mater. 8 [1979] 641–61; C.A. 91 [1979] No. 132191).
Hara, T.; Ohtsuka, N.; Ishizawa, Y. (Rep. Res. Cent. Ion Beam Technol. Hosei Univ. Suppl. No. 4 [1985] 125–30; C.A. 102 [1985] No. 191969).
Siegal, M.; Santiago, J. J.; Van der Spiegel, J. (Mater. Res. Soc. Symp. Proc. 52 [1986] 289–95; C.A. 105 [1986] No. 125873).
Bayerl, P.; Eichinger, P. (RS 03–75, Institut für Festkörpertechnologie, München 1975, 14 pp.).
Pantel, R.; Campidelli, Y.; Arnaud D’Avitaya, F. (J. Electrochem. Soc. 131 [1984] 2426–30).
Badoz, P. A.; Bakli, M.; Berenguer, M.; Morin, C; Oberlin, J. C; Palleau, J.; Pantel, R.; Perret, P.; Straboni, A.; Torres, J.; Vuillermoz, B. (Proc. 2nd Int. Conf. Electron Mater., Newark, N.J., 1990, pp. 527–32; C.A. 115 [1991] No. 219971).
Beck, S. M. (J. Chem. Phys. 87 [1987] 4233–4).
Beck, S. M. (J. Chem. Phys. 90 [1989] 6306–12).
Shaw, J. M.; Amick, J. A. (RCA Rev. 31 [1970] 306–16).
Baglin, J.; D’Heurle, F.; Petersson, S. (Appl. Phys. Lett. 33 [1978] 289–90).
Baglin, J.; Dempsey, J.; Hammer, W.; D’Heurle, F.; Petersson, S.; Serrano, C. (J. Electron. Mater. 8 [1979] 641–61).
Diem, M.; Fisk, M.; Goldman, J. (Thin Solid Films 107 [1983] 39–43).
Foord, J. S.; Jackman, R. B. (J. Opt. Soc. Am. B: Opt. Phys. 3 [1986] 806–11).
Makhmudov, K.; Kakharov, S. S.; Mamadalimov, A. T. (Izv. Akad. Nauk UzSSR Ser. Fiz.- Mat. Nauk 1984 No. 2, pp. 71–2; C.A. 101 [1984] No. 82319).
Fujisaki, Y.; Ando, T.; Kozuka, H.; Takano, Y. (J. Appl. Phys. 63 [1988] 2304–6).
Barcz, A. J.; Paine, B. M.; Nicolet, M.-A. (Appl. Phys. Lett. 44 [1984] 45–7).
Chang, C. C; Quintana, G. (J. Electron. Spectrosc. Relat. Phenom. 2 [1973] 363–76).
Borders, J. A.; Sweet, J. N. (Appl. Ion Beams Met. Int. Conf., Albuquerque 1973 [1974] pp. 179–91; C.A. 82 [1975] No. 103761).
Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J. (J. Vac. Sci. Technol. 16 [1979] 13–9).
Borders, J. A.; Sweet, J. N. (J. Appl. Phys. 43 [1972] 3803–8).
Pauleau, Y.; Lami, P.; Tissier, A.; Pantel, R.; Oberlin, J. C. (Thin Solid Films 143 [1986] 259–67).
Bayerl, P.; Eichinger, P. (RS-03–75, Institut f. Festkörpertechnologie München 1975).
Baglin, J. E. E.; D’Heurle, F. M.; Hammer, W. N.; Petersson, S. (Nucl. Instrum. Methods 168 [1980] 491–7).
Goetzel, C. G.; Landler, P. (WADD-TR-60–825 [AD-258574] [1960] 1–42; N.S.A. 15 [1961] No. 23986).
Garifullin, N. M.; Zubenko, Yu. V. (Vestn. Leningr. Univ. Ser. 4 Fiz. Khim. 1976 No. 2, pp. 59–66; C.A. 85 [1976] No. 135521).
Janssen, A. P.; Jones, J. P. (Surf. Sci. 41 [1974] 257–76).
Sinha, M. K.; Swenson, O. F. (Appl. Phys. Lett. 19 [1971] 493–4).
Sinha, M. K.; Swenson, O. F.; Venkatachalam, G. (Surf. Sci. 33 [1972] 414–8).
Borders, J. A.; Picraux, S. T. (Proc. IEEE 62 [1974] 1224–31; C.A. 82 [1975] No. 118362).
Petersson, C. S.; Baglin, J. E. E.; D’Heurle, F. M.; Dempsey, J. J.; Harper, J. M. E.; Serrano, C. M.; Tsai, M. Y. (Proc. Electrochem. Soc. 80–2 [1980] 290–310; C.A. 94 [1981] No. 200985).
Silversmith, D. J.; Rathman, D. D.; Mountain, R. W. (Thin Solid Films 93 [1982] 413–9).
Gelain, C; Cassuto, A.; Le Goff, P. (Bull. Soc. Fr. Ceram. 80 [1968] 23–7).
Samsonov, G. V.; Solonnikova, L. A. (Fiz. Met. Metalloved. 5 [1957] 565–6;
Samsonov, G. V.; Solonnikova, L. A. Phys. Met. Metallogr. [Engl. Transi.] 5 No. 3 [1957] 177; C.A. 1958 19804).
Weng, S. L. (Phys. Rev. B: Condens. Matter [3] 29 [1984] 2363–5).
Mitani, E.; Shichi, H.; Yamamoto, N. (Shitsuryo Bunseki 32 [1984] 315–8 from C.A. 102 [1985] No. 53443).
Zirinsky, S.; Hammer, W.; D’Heurle, F.; Baglin, J. (Appl. Phys. Lett. 33 [1978] 76–8).
Tonn, D. G.; Sankey, O. F.; Tsong, I. S. T. (Nucl. Instrum. Methods Phys. Res. B 15 [1986] 193–7; C.A. 104 [1986] No. 234599).
Bartlett, R. W.; Gage, P. R. (ASD-TDR-63–753-Pt. II [1964] 136 pp., 1–48, 124–7; N.S.A. 19 [1965] No. 7848).
Gage, P. R.; Bartlett, R. W. (Trans. Metall Soc. AIME 233 [1965] 832–4).
Kostikov, V. I.; Levin, N. P.; Levin, V. Ya. (Izv. Akad. Nauk SSSR Neorg. Mater. 5 [1969] 152–4;
Kostikov, V. I.; Levin, N. P.; Levin, V. Ya. Inorg. Mater. [Engl. Transi.] 5 [1969] 123–6).
Oertel, B.; Sperling, R. (Thin Solid Films 37 [1976] 185–94).
Campisi, G. J.; Bevolo, A. J.; Shanks, H. R.; Schmidt, F. A. (J. Appl. Phys. 53 [1982] 1714–9).
Bartlett, R. W.; Gage, P. R.; Larssen, P. A. (Trans. Metall. Soc. AIME 230 [1964] 1528–34).
Mayer, J. W.; Tu, K. N. (J. Vac. Sci. Technol. 11 [1974] 86–93).
Zmii, V. I.; Seryugina, A. S. (Zashch. Pokrytiya Met. No. 2 [1968] 195–201; Prot. Coat. Met. [Engl. Transi.] 2 [1970] 158–63).
Zmii, V. I. (Zashch. Pokrytiya Met.) No. 11 [1977] 14–8; C.A. 88 [1978] No. 10746).
Zmii, V. I.; Glushko, P. I.; Trofimov, V. F. (Izv. Akad. Nauk SSSR Neorg. Mater. 13 [1977] 1896–7;
Zmii, V. I.; Glushko, P. I.; Trofimov, V. F. Inorg. Mater. [Engl. Transi.] 13 [1977] 1525–6; C.A. 88 [1978] No. 27921).
Poltavtsev, N. S.; Zmii, V. I.; Snezhko, I. A. (Izv. Akad Nauk SSSR Neorg. Mater. 16 [1980] 674–7;
Poltavtsev, N. S.; Zmii, V. I.; Snezhko, I. A. Inorg. Mater. [Engl. Transi.] 16 [1980] 464–6).
Zmii, V. I.; Glushko, P. I.; Trofimov, V. F. (Izv. Akad. Nauk SSSR Neorg. Mater. 17 [1981] 644–6;
Zmii, V. I.; Glushko, P. I.; Trofimov, V. F. Inorg. Mater. [Engl. Transi.] 17 [1981] 427–9).
Zmii, V. I.; Kartmazov, G. N.; Poltavtsev, N. S.; Semenov, N. A. (Izv. Akad. Nauk SSSR Neorg. Mater. 17 [1981] 916–7;
Zmii, V. I.; Kartmazov, G. N.; Poltavtsev, N. S.; Semenov, N. A. Inorg. Mater. [Engl. Transi.] 17 [1981] 654–5).
Zmii, V. I. (Fiz. Khim. Obrab. Mater. 1986 No. 3, pp. 96–101 ; C.A. 105 [1986] No. 83544).
Zmii, V. I.; Kovtun, N. V.; Matyukhina, L. G. (Poverkhnost 1989 No. 8, pp. 148–53; C.A. 111 [1989] No. 199747).
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Jehn, H., Gmünd, S., Bär, G., Best, E., Koch, E. (1993). Reactions with Silicon. In: von Jouanne, J., Koch, E., Koch, E. (eds) W Tungsten. Gmelin Handbook of Inorganic and Organometallic Chemistry - 8th Edition, vol W / A-B / A / 5 / b. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-08684-1_9
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