Abstract
The most frequently used, and most important, epitaxial growth process is heteroepitaxy, namely, the epitaxial growth of a layer or a thin film with a chemical composition, and usually also structural parameters, different from those of the substrate. Different aspects of heteroepitaxy have already been presented and discussed in this book. The definition of this growth process is given in Sect. 1.1, which is followed by an introduction to heterogeneous nucleation in Sect. 2.1. and a detailed presentation of interface dislocations occurring in heterostructures. A concise survey of the specific features of heteroepitaxial layers is presented in Sect. 2.3.2, while the most interesting application areas of heteroepitaxial multilayer structures are discussed in Sect. 3.1. The thermodynamics of heterointerface formation processes is described in Sect. 11.4, while the most fascinating problem of self organization in heteroepitaxial growth is discussed in detail in Sect. 11.5. Finally, the atomistic approach to heteroepitaxy, including growth on vicinal surfaces, and the important role of surface structure for heteroepitaxy, are the subjects of Chaps. 12 and 13, respectively.
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Herman, M.A., Richter, W., Sitter, H. (2004). Heteroepitaxy; Growth Phenomena. In: Epitaxy. Springer Series in MATERIALS SCIENCE, vol 62. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07064-2_14
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