Abstract
The statistics in publications on crystal growth show that a large portion (~25% – 30%) of the papers in this field are devoted to the growth of crystals and films from the vapor phase. Together with crystallization from melts or solutions, crystallization from the vapor phase can be considered one of the most commonly used methods of crystal growth, particularly in semiconductor electronics. This chapter gives a systematic account of the foundations of the methods generally used to grow crystals from the vapor: physical vapor deposition (molecular-beam method, cathode sputtering, vapor phase crystallization in a closed system, gas flow crystallization); chemical vapor deposition (chemical transport, vapor decomposition, vapor synthesis); and crystallization from the vapor via a liquid zone. Growth mechanisms and the typical parameters of growth processes and of the grown crystals are also discussed for each technique.
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Reference
G.R. Booker, B.A. Joyce: Philos. Mag. 14, 301 (1966)
Yu. Khariton, A.I. Shal’nikov: Mekhanizm kondensatsii i obrazovaniye kolloidov (Condensation Mechanism and the Formation of Colloids) ( Gostekhteorizdat, Leningrad 1934 )
M.H. Francombe, J.E. Johnson: “The Preparation and Properties of Semi-conductor Films”, in Physics of Thin Films, Vol. 5, ed. by G. Hass, R.E. Thun ( Academic, New York 1969 ) p. 143
H.M. Manasevit: J. Cryst. Growth 22, 125 (1974)
G.W. Cullen: In Heteroepitaxial Semiconductors for Electronic Devices, ed. by G.W. Cullen, C.C. Wang ( Springer, Berlin, Heidelberg, New York 1978 )
J. Cryst. Growth (special issue) 58 (1982)
E.I. Givargizov, N.N. Sheftal’, V.I. Klykov: “Oriented Crystallization on Amorphous Substrates”, Current Topics Mat. Sci., Vol.10 ( North-Holland, Amsterdam 1982 ), pp. 1–53
N.N. Sheftal’: “Trends in Real Crystal Formation and Some Principles for Single-Crystal Growth”, in Growth of Crystals, Vol. 10, ed. by N.N. Sheftal’ ( Consultants Bureau, New York 1976 ) pp. 185–210
V.I. Klykov, N.N. Sheftal’, E. Hartmann: Acta Phys. Acad. Sci. Hung. 47, 167 (1979)
M.W. Geis, D.C. Flanders, H.I. Smith: Appl. Phys. Lett. 35, 71 (1979)
M.W. Geis, D.A. Antoniadis, D.J. Silversmith, R.W. Mountain, H.I. Smith: Appl. Phys. Lett. 37, 454 (1980)
C. Weissmantel: J. Vac. Sci. Technol. 18, 179 (1981)
R. Anton, H. Poppa, D.C. Flanders: J. Cryst. Growth 56, 433 (1982)
L.S. Darken, D.H. Lowndes: 161st Electrochem. Soc. Meeting, Montreal, Canada, May 1982, Extended Abstracts
J.C.C. Fan, M.W. Geis, 8.-Y•. Tsaur: Appl. Phys. Lett. 38, 365 (1981)
B.-Y. Tsaur, J.C.C. Fan, M.W. Geis, D.J. Silversmith, R.W. Mountain: Appl. Phys. Lett. 39, 561 (1981)
R.W. McClelland, C.O. Bozler, J.C.C. Fan: Appl. Phys. Lett. 37, 560 (1980)
P. Vohl, C.O. Bozler, R.W. McClelland, A. Chu, A.J. Strauss: J. Cryst. Growth 56, 410 (1982)
L. Holland: Vacuum Deposition of Thin Films ( Chapman and Hall, London 1956 )
P. Archibald, E. Parent: Solid State Technol. 19, N7, 32 (1976)
B.J. Miller, J.H. McFee: J. Electrochem. Soc. 125, 1310 (1978)
K.-G. Günther: “Vaporization and Reaction of the Elements”, in Compound Semiconductors, Vol. 1, Preparation of III-V Compounds, ed. by R.K. Willardson, H.L. Goering (Reinhold, New York 1962 ) p. 313
H. Freller, K.G. Günther: Thin Solid Films 88, 291 (1982)
K. Morimoto, H. Watanabe, S. Itoh: J. Cryst. Growth 45, 334 (1978)
R.D. Gretz, C.M. Jackson, J.P. Hirth: Surf. Sci. 6, 171 (1967)
A.Y. Cho, J.R. Arthur: “Molecular Beam Epitaxy”, in Progress in Solid State Chemistry, Vol.10, ed. by G. Somorjai, J. McCaldin (Pergamon, New York, 1975 )
A.C. Gossard, P.M. Petroff, W. Weigman, R. Dingle, A. Savage: Appl. Phys. Lett. 29, 323 (1976)
Progr. Cryst. Growth and Characterization (special issue), 2 p.1 (1979)
R.Z. Bachrach: “MBE — Molecular Beam Epitaxial Evaporative Growth”, in Crystal Growth, ed. by B. Pamplin ( Pergamon, London 1980 )
R.F.C. Farrow: J. Vac. Sci. Technol. 19, 150 (1981)
E. Kasper: Appl. Phys. A28, 1 (1982)
P.E. Luscher: Thin Solid Films 83, 125 (1981)
T. Yao, S. Maekawa: J. Cryst. Growth 53, 423 (1981)
F. Kitagawa, T. Mishima, K. Takahashi: J. Electrochem. Soc.127, 937 (1980)
J.P. Faurie, A. Millon: J. Cryst. Growth 54, 577, 582 (1981)
A.A. Tikhonova: Kristallografiya 20, 615 (1975) [English transl.: Soy. Phys. Crystallogr.20, 375 (1975)]
L.I. Maissel: “The Deposition of Thin Films by Cathode Sputtering”, in Physics of Thin Films, Vol. 3, ed. by G. Hass, R.E. Thun ( Academic, New York 1966 ) p. 61
J.E. Greene, S.A. Barnett, K.C. Cadien, M.A. Ray: J. Cryst. Growth 56, 389 (1982)
V. Hoffman: Solid State Technol. 19, N12, 57 (1976)
L. Holland: Thin Solid Films 86, 227 (1981)
A.R. Nyaiesh: Thin Solid Films 86, 267 (1981)
K. Urbanek: Solid State Techno1.20, N7, 87 (1977)
R. Adachi, K. Takashita: J. Vac. Sci. Techno1. 20, 98 (1982)
J.E. Varga, W.A. Bailey: Solid State Technol. 20, N12, 67 (1973)
A.E.T. Kuiper, G.E. Thomas, W.J. Schouten: J. Cryst. Growth 45, 332 (1978)
T. Spalvins: J. Vac. Sci. Techno1. 17, 315 (1980)
A. Matthews, D.G. Teer: Thin Solid Films 80, 41 (1981)
J.N. Avaritsiotis, R.P. Howson: Thin Solid Films 77, 351 (1981)
H.S. Randhava, M.D. Matthews, R.F. Bunshah: Thin Solid Films 83, 267 (1981)
E. Kaldis: “Principles of the Vapour Growth of Single Crystals”, in Crystal Growth. Theory and Techniques, Vol. 1, ed. by C.H.L. Goodman ( Plenum, New York 1974 ) p. 49
M.M. Factor, I. Garrett: Gi’owth of Crystals from the Vapour (Chapham and Hall, London 1974)
E. Schönherr: “The Growth of Large Crystals from the Vapour Phase”, Crystals, Vol. 2 ( Springer, Berlin, Heidelberg, New York 1980 )
V.P. Zlomanov, E.V. Masyakin, A.V. Novoselova: J. Cryst. Growth 26, 261 (1974)
S.J.C. Irvine, J.B. Mullin: J. Cryst. Growth 53, 458 (1981)
K. Mochizuki: J. Cryst. Growth 53, 355 (1981)
K. Kinoshita, S. Miyazawa: J. Cryst. Growth 57, 141 (1982)
J. Morimoto, T. Ito, T. Yoshioka, T. Miyakawa: J. Cryst. Growth 57, 362 (1982)
E. Schönherr: J. Cryst. Growth 57, 493 (1982)
C. Barta, E. Kostal, A. Triska: Cryst. Res. Technol. l7, 411 (1982)
Yu.M. Tairov, V.F. Tsvetkov: J. Cryst. Growth 52, 146 (1981)
R. Triboulet: Rev. Phys. Appl. 12, 123 (1977)
T. Taguchi, S. Fujita, Y. Inuishi: J. Cryst. Growth 45, 204 (1978)
R. Triboulet, Y. Marfaing: J. Cryst. Growth 51, 89 (1981)
H. Kezuka, K. Iwamura, T. Masaki: Thin Solid Films 83, 47 (1981)
Yu.A. Vodakov, E.N. Mokhov, M.G. Ramm, A.D. Roenkov: Krist. Tech. 14, 729 (1979);
E.N. Mokhov, I.L. Shulpina, A.S. Tregulova, Yu.A. Vodakov: Cryst. Res. Technol. l6, 879 (1981)
A. Lopez-Otero: Thin Solid Films 49, 3 (1978)
W.M. Yim, E.J. Stofko: J. Electrochem. Soc.119, 381 (1972)
A. Lely: Ber. Dtsch. Keram. Ges. 32, 229 (1955)
E.V. Markov, A.A. Davydov: Izv. Akad. Nauk SSSR, Neorg. Mater. 7, 575 (1971)
H. Schäfer: Chemische Transportreaktionen (Verlag Chemie, Weinheim 1961)
R. Nitsche: Fortschr. Mineral 44, 231 (1966)
J. Mercier: J. Cryst. Growth 56, 235 (1982)
H. Scholz, R. Kluckow: J. Phys. Chem. Solids, Suppl.l, 475 (1967); H. Scholz: Acta Electron.17, 69 (1974)
M. Schieber, M.F. Schnepple, L. Van den Berg: J. Cryst. Growth 33, 125 (1976)
L.A. Zadorozhnaya, V.A. Lyakhovitskaya, E.I. Givargizov, L.M. Belyaev: J. Cryst. Growth 41, 61 (1977)
L.S. Gagara, P.A. Gashin, G.G. Dvornik, V.V. Leondar, P.S. Paskal, A.V. Simashkevich: Cryst. Res. Technol. l7, 345 (1981)
M. Aoki, K. Tada, T. Murai, T. Inoue: Thin Solid Films 83, 283 (1981)
M. Shimizu, T. Shiozaki, A. Kawabata: J. Cryst. Growth 57, 94 (1982)
F.H. Nicoll: J. Electrochem. Soc. 110, 1165 (1963)
J. Nishizawa: “Aspects of Silicon Epitaxy”, in Crystal Growth. Theory and Techniques, Vol. 2, ed. by C.H.L. Goodman ( Plenum, New York 1978 ) p. 57
N.N. Sheftal’, N.P. Kokorish, A.V. Krasilov: Izv. Akad. Nauk SSSR, Ser. Fiz. 21, 146 (1957)
H.C. Theuerer: J. Electrochem. Soc.108, 649 (1961)
J. Bloem, L.J. Gilling:•“Mechanisms of the Chemical Vapour Deposition of Silicon”, Current Topics Mat. Sci., Vol.1 ( North-Holland, Amsterdam 1978 ) p. 147
J. Bloem: J. Cryst. Growth 50, 581 (1980)
J. Bloem, W.A.P. Claassen, W.C.J.N. Valkenburg: J. Cryst. Growth 57, 177 (1982)
K.E. Bean: Thin Solid Films 83, 173 (1981)
W. Steinmaier: Philips Res. Rep.18, 75 (1963)
E. Sirti, L.P. Hunt, D.H. Sawyer: J. Electrochem. Soc. 121, 919 (1974)
V.S. Ban: J. Electrochem. Soc. 125, 317 (1978)
F. Eversteyn, P. Severin, C.H. Brekel: J. Electrochem. Soc.117, 925 (1970)
E.I. Givargizov: Fiz. Tverd. Tela 6 1804 (1964) [English transl.: Sov. Phys. Solid State 6 1415 (1964)]
D.C. Gupta: Solid State Technol. l4, 33 (1978)
M.L. Hammond: Solid State Techno1. 21, 68 (1978)
Y.S. Chiang, G.W. Looney: J. Electrochem. Soc. 120, 550 (1973)
W.G. Townsend, M.E. Uddin: Solid State Technol. 16, N3, 39 (1973)
M.J.-P. Duchemin, M.M. Bonnet, M.F. Koelsch: J. Electrochem. Soc.125, 637 (1978)
J.L. Gentner, C. Bernard, R. Cadoret: J. Cryst. Growth 56, 332 (1982)
R.S. Rosler: Solid State Technol. 20, N4, 63 (1977)
C.H.J. van den Brekel, L.J.M. Bollen: J. Cryst. Growth 54, 310 (1981)
W.A.P. Claassen, J. Bloem, W.G.J.N. Valkenburg, C.H.J. van den Brekel: J. Cryst. Growth 57, 259 (1982)
C.F. Powell, J.H. Oxley, J.M. Blocher (eds.): Vapor Deposition ( Wiley, New York 1966 )
B.V. Derjaguin, B.V. Spitsyn, A.E. Gorodetsky, A.P. Zakharov, L.L. Bouilov, A.E. Alekseenko: J. Cryst. Growth 31, 44 (1975)
B.V. Spitsyn, L.L. Bouilov, B.V. Derjaguin: J. Cryst. Growth 52, 219 (1981)
W. von Muench, E. Pettenpaul: J. Electrochem. Soc. 125, 294 (1978)
W.M. Feist, S.R. Steel, D W Readey: “The Preparation of Films by Chemical Vapour Deposition”, in Physics of Thin Films, Vol. 5 ( Academic, New York 1969 ) p. 237
J.R. Knight, D. Effer, P.R. Evans: Solid State Electron. 8, 178 (1965)
J.V. DiLorenzo: J. Cryst. Growth 17, 189 (1972)
T. Mizutani, M. Yoshida, A. Usui, H. Watanabe, T. Yuasa, I. Hayashi: Jpn. J. Appl. Phys./9, L113 (1980)
P. Vohl: J. Cryst. Growth 54, 101 (1981)
G.H. Olsen, C.J. Nuese, M. Ettenberg: Appl. Phys. Lett. 34, 262 (1979)
H. Seki, A. Koukitu, M. Matsumara: J. Cryst. Growth 54, 615 (1981)
J. Cryst. Growth (special issue: “Metalorganic Vapor Phase Epitaxy”) 55 (1981)
M. Morita, N. Uesugi, S. Isogai, K. Tsubouchi, N. Mikoshiba: Jpn. J. Appl. Phys. 20, 17 (1981)
T. Fukui, Y. Horikoshi: Jpn. J. Appl. Phys. 20, 587 (1981)
R.M. Biefeld: J. Cryst. Growth 56, 382 (1982)
S.J.C. Irvine, J.B. Mullin, A. Royle: J. Cryst. Growth 57, 15 (1982)
K. Shohno, H. Ohtake, J. Bloem: J. Cryst. Growth 45, 187 (1978)
M. Sano, M. Aoki: Thin Solid Films 83, 247 (1981)
T. Muranoi, M. Furukoshi: J. Electrochem. Soc.127, 2295 (1980)
T. Matsumoto, T. Morita, T. Ishida: J. Cryst. Growth 53, 225 (1981)
M.D. Scott, J.O. Williams, R.C. Goodfellow: J. Cryst. Growth 51, 267 (1981)
A.E.T. Kuiper, G E Thomas, W J Schouten: J. Cryst. Growth 51, 17 (1981)
S.N. Maximovsky, I.P. Revocatova, M.A. Selezneva: J. Cryst. Growth 52, 141 (1981)
I.W. Boyd, J.I.B. Wilson, J.L. West: Thin Solid Films 83, L173 (1981)
M. Hanabusa, A. Namiki, K. Yoshihara: Appl. Phys. Lett. 35, 626 (1979)
V. Baranauskas, C.I.Z. Mammana, R.E. Klinger, J.E. Greene: Appl. Phys. Lett. 36, 930 (1980)
G. Leyendecker, D. Bauerle, P. Geitner, H. Lydtin: Appl. Phys. Lett. 39, 921 (1981)
T.F. Deutsch, D.J. Ehrlich, R.M. Osgood: Appl. Phys. Lett. 35, 175 (1979)
T.F. Deutsch, D.J. Ehrlich, R.M. Osgood: Appl. Phys. Lett. 38, 1018 (1981)
T.F. Deutsch, D.J. Ehrlich, R.M. Osgood: Appl. Phys. Lett. 39, 957 (1981)
J. Electrochem. Soc.128, 2039 (1981)
R.S. Wagner, W.C. Ellis: Appl. Phys. Lett. 4, 89 (1964)
R.S. Wagner: “Growth of Crystals by the Vapour—Liquid—Solid Mechanism”, in Whisker Technology, ed. by A.P. Levitt ( Wiley, New York 1970 ) p. 47
G.A. Bootsma, H.J. Gassen: J. Cryst. Growth 10, 223 (1971)
E.I. Givargizov: “Growth of %!hiskers by the Vapour-Liquid-Solid Mechanism”, Current Topics Mat. Sci., Vol.1 ( North-Holland, Amsterdam 1978 ) p. 79
E.I. Givargizov, A.A. Chernov: Kristallografiya 18 147 (1973) [English transl.: Sov. Phys. Crystallogr.18, 89 (1973)]
E.I. Givargizov: J. Cryst. Growth 31, 20 (1975)
O. Nittono, H, Hasegawa, S. Nagakura: J. Cryst. Growth 42, 175 (1977)
R.R. Hasiguti, T. Ishibashi, H. Yumoto: J. Cryst. Growth 45, 13 (1978)
R.R. Hasiguti, H. Yumoto, Y. Kuriyama: J. Cryst. Growth 52, 135 (1981)
R.S. Wagner, W.C. Ellis: Trans. Metall. Soc. AIME 233, 1053 (1965)
E.N. Sickafus, D.B. Barker: J. Cryst. Growth 1, 93 (1967)
D. Nenov, E D Dukova: Krist. Tech. 7, 779 (1972)
R.S. Wagner: J. Cryst. Growth 3/4, 159 (1968)
C.Y. Lou, G.A. Somorjai: J. Chem. Phys. 55, 4554 (1971)
E.I. Givargizov, R.A. Babasyan: J. Cryst. Growth 37, 140 (1977)
E. Kaldis: “Liquid Layers on Vapour Grown Crystals”, in Crystal Growth and Characterization, ed. by R. Ueda, J.B. Mullin ( North-Holland, Amsterdam 1975 ) p. 225
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Chernov, A.A. (1984). Growth from the Vapor Phase. In: Modern Crystallography III. Springer Series in Solid-State Sciences, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81835-6_8
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