Abstract
Like any interfacial process, crystal growth strongly depends on active impurities present in a crystallizing system even in amounts which do not influence the properties of the bulk. On the other hand, many of these properties depend on the amount of impurities or point defects in the grown crystal. Thus the manner in which impurities are trapped by growing crystals is one of the most important characteristics of growth technology. The influence of impurities on growth kinetics is reviewed in Sect. 4.1, and the thermodynamics and kinetics of impurity trapping are analyzed in Sects. 4.2 and 4.3, respectively.
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Chernov, A.A. (1984). Impurities. In: Modern Crystallography III. Springer Series in Solid-State Sciences, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81835-6_4
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