Abstract
Electron paramagnetic resonance is the resonant absorption of electromagnetic radiation by systems composed of unpaired electrons placed in a magnetic field. The ground states of partially filled electron orbitals are spin degenerate. In a magnetic field, because there are several possible orientations for the magnetic moment associated with the total spin, the degeneracy is lifted. Energy levels associated with each orientation arise and absorption occurs when transitions are induced between them.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
C.P. Schlichter: Principles of Magnetic Resonance, 2nd ed., Springer Ser. Solid Sci., Vol. 1 ( Springer, Berlin, Heidelberg, New York 1980 )
A. Abragam, B. Bleaney: Resonance Paramagnetique Electronique des Ions de Transition ( Presses universitaires de France, Paris 1971 )
Applications of EPR to semiconductors were treated, for instance by G.W. Ludwig, H.H. Woodbury: In Solid State Physics, ed. by F. Seitz and D. Turnbull, Vol.13 (Academic, New York 1962 ) or G. Lancaster: Electron Spin Resonance in Semiconductors ( Plenum, New York 1967 )
This subject has recently been treated by G.D. Watkins: In Point Defects in Solids,Vol.2, ed. by J.H. Crawford and L.M. Slifkin (Plenum, New York 1975) Chap.4
This is also the case for other simple defects produced by electron irradiation such as the divacancy
G.D. Watkins, J.W. Corbett: Phys. Rev. 138, A543 (1965)
G.D. Watkins, J.W. Corbett: Phys. Rev. 121, 1001 (1961)
E.L. Elkin, G.D. Watkins: Phys. Rev. 174, 881 (1968)
etc. EPR identification of some of these defects will also be detailed here
For details and justification on this question see textbooks on quantum mechanics: For instance,L.I. Schiff: Quantum Mechanics ( Mc Graw-Hill, New York 1965)
L.D. Landau, E.M. Lifshitz: Quantum Mechanics ( Pergamon, London 1968 )
For details see T.H. Wilmshurst: Electron Spin Resonance Spectrometers ( Plenum, New York 1968 )
J.H. Van Vleck: Electric and Magnetic Susceptibilities (Univ. Press, Oxford 1932 )
M.H.L. Pryce: Proc. Phys. Soc. (London) A63, 25 (1950)
A.M. Stoneham: Theory of Defects in Solids (Clarendon Press, Oxford 1975) Chap.13
G.D. Watkins, J.W. Corbett: Phys. Rev. 121, 1001 (1961)
J. Christiansen (ed.): Hyperfine Interactions of Radioactive Nuclei, Topics Current Physics, Vol.31 (Springer, Berlin, Heidelberg, New York 1983 )
G.D. Watkins: In Radiation Damage in Semiconductors, ed. by P. Baruch ( Dunod, Paris 1965 ) p. 97
W.V. Smith, P.P. Sorokin, I.L. Gelles, G.J. Lasher: Phys. Rev. 115, 1546 (1959)
K.L. Brower: Phys. Rev. B1, 1908 (1970)
G. Feher: Phys. Rev. 114, 1219 (1952)
See, for instance: G.D. Watkins: Phys. Rev. 155, 802 (1967)
K.L. Brower: Phys. Rev. B4, 1968 (1971)
A. Carrington, A.D. McLachlan: Introduction to Magnetic Resonance ( Harper and Row, New York 1967 ) p. 116
K.L. Brower: In Radiation Effects in Semiconductors, ed. by J.W. Corbett and G.D. Watkins ( Gordon and Breach, New York 1971 ) p. 189
J.W. Corbett: In Solid State Physics, Supp1.7, ed. by F. Seitz and D. Turnbull ( Academic, New York 1966 ) p. 79
G.D. Watkins, J.W. Corbett: Discussions Faraday Soc. 31, 86 (1961); Phys. Rev. 134, A 1359 (1964)
3.22 G.D. Watkins: J. Phys. Soc. Jpn. 18Suppl.2, 22 (1963)
M. Lannoo, J.C. Bourgoin: In Defects and Radiation Effects in Semiconductors 1982 (Inst. Phys. Conf. Ser., to be published)
G.D. Watkins: In Radiation Effects in Semiconductors, ed. by F.L. Vook ( Plenum, New York 1968 ) p. 97
3.25 M. Lannoo, G.A. Baraff, M. Schlüter: Phys. Rev. 24955 (1981)
G.D. Watkins: In Lattice Defects in Semiconductors (Inst. Phys. London 1975) Conf. Ser. 23, p.1
E.L. Elkin, G.D. Watkins: Phys. Rev. 174, 881 (1968)
R.A. Swalin: J. Phys. Chem. Solids 18, 290 (1961)
F.P. Larkins, A.M. Stoneham: J. Phys. C (Solid State Physics) 4, 143 (1971)
M. Lannoo, G. Allan: Phys. Rev. B 25, 4089 (1982)
G.A. Baraff, E.O. Kane, M. Schlüter: Phys. Rev. 21, 5662 (1980)
G.D. Watkins, J.R. Troxell: Phys. Rev. Lett. 44, 593 (1980)
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1983 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Bourgoin, J., Lannoo, M. (1983). Electron Paramagnetic Resonance. In: Point Defects in Semiconductors II. Springer Series in Solid-State Sciences, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81832-5_3
Download citation
DOI: https://doi.org/10.1007/978-3-642-81832-5_3
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-81834-9
Online ISBN: 978-3-642-81832-5
eBook Packages: Springer Book Archive