Abstract
Czochralski grown (CZ) Si wafers presently used for VLSI are of high quality, but still contain oxygen and carbon as residual impurities. These impurities are responsible for the formation of microdefects. Especially, oxygen suppresses the wafer warpage and deformation during various heat treatments in device-fabrication processes. Thus, these impurities have strong influence on the device-production yield. Therefore, the understanding of their behaviours, and both the analysis and the control of the impurities are of importance.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1986 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Tarui, Y. (1986). Crystal Technology. In: Tarui, Y. (eds) VLSI Technology. Springer Series in Electrophysics, vol 12. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-69192-8_5
Download citation
DOI: https://doi.org/10.1007/978-3-642-69192-8_5
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-69194-2
Online ISBN: 978-3-642-69192-8
eBook Packages: Springer Book Archive