Abstract
In electronic devices the electrical insulation of different areas is often achieved by layers of silicon-dioxide. These are usually created by exposing the silicon wafers at process temperatures between 700–1200°C to a gas flow containing oxygen or to a stream. Using different oxygen isotrops tracer experiments have shown that the new oxide is created at the interface between silicon and silicon-dioxide.
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Dedicated to Professor Karl-Heinz Hoffmann on the occasion of his 60th birthday
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© 2000 Springer-Verlag Berlin Heidelberg
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Merz, W. (2000). The Oxidation Process of Silicon. In: Bungartz, HJ., Hoppe, R.H.W., Zenger, C. (eds) Lectures on Applied Mathematics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-59709-1_15
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DOI: https://doi.org/10.1007/978-3-642-59709-1_15
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