Abstract
The current microscopic understanding of the interface chemistry and structure of Schottky barrier formation is described in this chapter. This chapter builds upon the physics of Schottky barriers presented in Chapter 1 and provides some background to the fabrication of Schottky barriers described in Chapter 3. The more recent investigations are discussed and the current status of the detailed picture we now have for metal-semiconductor barriers on group IV, III–V, and II–VI semiconductors is reviewed. In particular, this chapter emphasizes the pervasive importance of interfacial interdiffusion and interactions in metal-semiconductor systems. As will become apparent from the discussion below, many intrinsic aspects of Schottky barrier formation have been elucidated, but much detail remains to be unraveled in specific metal-semiconductor systems.
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Bachrach, R.Z. (1984). Interface Chemistry and Structure of Schottky Barrier Formation. In: Sharma, B.L. (eds) Metal-Semiconductor Schottky Barrier Junctions and Their Applications. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-4655-5_2
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