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Diffusion in Oxide Semiconductors

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Atomic Diffusion in Semiconductors

Abstract

Oxides play an important role in certain semiconductors, as corrosion product layers on metals, as catalysts, and as materials used in the manufacture of ceramics. In this chapter an attempt will be made to point out trends in transport through oxides. The diversity of different oxides, their structures and compositions make classification difficult. Some generalizations can be made which aid in classifying the types of diffusion in oxides. Bulk diffusion depends on temperature, oxide structure, the number of point defects in the oxide and hence the position of the metal in the periodic table and finally on the partial pressure of oxygen coexisting over a particular oxide. Special attention will be directed to the role of the partial pressure in equilibrium with the oxide.

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  1. J. Bruce Wagner Jr.
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  1. Department of Physics, The University Hull, England

    D. Shaw

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Wagner, J.B. (1973). Diffusion in Oxide Semiconductors. In: Shaw, D. (eds) Atomic Diffusion in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-8636-4_8

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