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The Calculation of Diffusion Coefficients in Semiconductors

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Atomic Diffusion in Semiconductors

Abstract

The intent of the present chapter is to discuss the current status of theoretical work which has been performed in connection with predicting rates of atomic motion in semiconducting materials. This theoretical work, aside from being of intrinsic interest, has some utility for individuals interested in experimental phenomena. Firstly, the calculations provide a means for estimating diffusion properties for systems which have not been studied or for systems for which it is difficult to perform measurements. Secondly, some calculations can often be used as a test of the accuracy of experimental data inasmuch as data for systems which do not conform to calculations based on reasonable models are suspect, and those systems become targets for future work in order to verify or reject the early measurements. As an example, in metal systems theoretical calculations have played a major role confirming the accuracy or inaccuracy of a given set of experimental data. Thirdly, inasmuch as the process of atomic diffusion involves ionic interactions which deviate substantially from equilibrium conditions, experimental data interpreted through various models, in principle, can provide information about the nature of very short-range as well as very long-range forces in crystals.

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Authors
  1. R. A. Swalin
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Editors and Affiliations

  1. Department of Physics, The University Hull, England

    D. Shaw

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© 1973 Plenum Publishing Company Ltd

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Swalin, R.A. (1973). The Calculation of Diffusion Coefficients in Semiconductors. In: Shaw, D. (eds) Atomic Diffusion in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-8636-4_2

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  • DOI: https://doi.org/10.1007/978-1-4615-8636-4_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4615-8638-8

  • Online ISBN: 978-1-4615-8636-4

  • eBook Packages: Springer Book Archive

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