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High Temperature Dynamic Behavior of Silicon Surfaces Studied by STM

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In-Situ Microscopy in Materials Research

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Abstract

After the invention of the scanning tunneling microscope (STM) and confirmation of its usefulness in observing the surface atomic structures at an atomic-scale resolution [1–3], STM has been regarded as an essential tool in various fields such as surface physics, surface chemistry, crystal growth, and silicon technology [4]. Its field of application is still expanding to the fields of, for example, biology, tribology, electrochemistry, due to its performance capabilities in air and liquid as well as in ultrahigh vacuum (UHV). Moreover, its range of operating temperature is also expanding down to temperatures as low as liquid He-3 (0.3 K) temperature [5] and up to temperatures as high as 950 °C [6].

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Authors and Affiliations

  1. Joint Research Center for Atom Technology (JRCAT), National Institute for Advanced Interdisciplinary Research (NAIR), Higashi 1-1-4, Tsukuba, Ibaraki, 305, Japan

    Hiroshi Tokumoto

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  1. Hiroshi Tokumoto
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Editors and Affiliations

  1. Central Research and Development, Science and Engineering Laboratories, DuPont, Experimental Station, Wilmington, Deleware, 19880-0356, USA

    Pratibha L. Gai

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Tokumoto, H. (1997). High Temperature Dynamic Behavior of Silicon Surfaces Studied by STM. In: Gai, P.L. (eds) In-Situ Microscopy in Materials Research. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-6215-3_11

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  • DOI: https://doi.org/10.1007/978-1-4615-6215-3_11

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-9989-6

  • Online ISBN: 978-1-4615-6215-3

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