Abstract
Zinc telluride (ZnTe) is a wide-band-gap II–VI semiconductor (E g=2.25 eV at 300 K) crystallizing in the cubic, zinc-blende structure. This material is promising for application as a purely green light-emitting diode. Most wide-band-gap II–VI semiconductors can be easily doped n type, but resist p-type doping. The most notable exception is ZnTe which is easily doped p type, but not n type. It is, thus, quite a challenge to achieve n-type doping of ZnTe. Recently, successful growth of low-resistivity (as low as 0.1–0.3 Ω-cm) n-type ZnTe epitaxial layers has been achieved by MOCVD on Bridgman-grown (100)ZnTe substrates with the use of triethylaluminium as the dopant [1]. This result may be encouraging in the search for various optoelectronic devices based on ZnTe.
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Adachi, S. (1999). Zinc Telluride (ZnTe). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_36
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DOI: https://doi.org/10.1007/978-1-4615-5247-5_36
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