Abstract
Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
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Adachi, S. (1999). Gallium Arsenide (GaAs). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_22
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DOI: https://doi.org/10.1007/978-1-4615-5247-5_22
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