Abstract
Gallium phosphide (GaP) is commercially one of the most important III–V semiconductors because of its application to electroluminescent devices. GaP is an indirect-band-gap semiconductor possessing the zinc-blende structure. A wide variety of theoretical and experimental works have given detailed information about the phySiCal properties of this material (see Refs. [1,2]).
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Adachi, S. (1999). GALLIUM PHOSPHIDE (GaP). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_21
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DOI: https://doi.org/10.1007/978-1-4615-5247-5_21
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