Abstract
Aluminum nitride (A1N) has a large band gap (∼6 eV at 300 K), a high thermal conductivity (∼3.2 W cm−1 K1 at 300 K), and large piezoelectric constants (∼∣2−5∣×10−10 cm/V at 300 K) (see Ref. [1]). AIN has also excellent insulator and passivation properties, low dispersion of permittivity, and low dielectric loss. These make it useful for numerous device applications (see, e.g., Ref. [2]).
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Adachi, S. (1999). Aluminum Nitride (AIN). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_15
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DOI: https://doi.org/10.1007/978-1-4615-5247-5_15
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