Abstract
First we will introduce quantum wells by discussing their basic physics, their structure, fabrication technologies, and their elementary linear optical properties.
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References
For an introductory summary of quantum well optical physics and devices, see D. A. B. Miller, “Optoelectronic applications of quantum wells”, Optics and Photonics News 1, No. 2, pp 7-15, February 1990.
For a longer treatment of the physics, see D. A. B. Miller, D. S. Chemla, and S. Schmitt-Rink, “Electric Field Dependence of Optical Properties of Semiconductor Quantum Wells: Physics and Applications”, and D. S. Chemla, S. Schmitt-Rink, and D. A. B. Miller, “Nonlinear Optical Properties of Semiconductor Quantum Wells”, both chapters in “Optical Nonlinearities and Instabilities in Semiconductors”, ed. H. Haug, (Academic Press, Boston, 1988)
For an extensive discussion of quantum well optical physics see S. Schmitt-Rink, D. S. Chemla, and D. A. B. Miller, “Linear and nonlinear optical properties of semiconductor quantum wells”, Advances in Physics 38, 89-188 (1989)
For an extended discussion of band structure and states in quantum wells, see G. Bastard, “Wave mechanics applied to semiconductor heterostructures”, (Les Editions de Physique, Les Ulis, France)
For extended treatments of quantum well optoelectronic devices see D. A. B. Miller, “Quantum Well Optoelectronic Switching Devices”, International Journal of High Speed Electronics 1, 19–46 (1990)
D. A. B. Miller, “Quantum Well Self Electrooptic-Effect Devices”, Optical and Quantum Electronics 22, S61–S98 (1990).
References
see, e.g., A. Y. Cho, “Advances in molecular beam epitaxy (MBE)”, Journal of Crystal Growth 111, 1–13 (1991)
see, e.g., K. Furuya, and Y. Miyamoto, “GaInAsP/InP organometallic vapor phase epitaxy for research and fabrication of devices”, Int. J. High Speed Electronics 1, 347–367 (1990)
see, e.g., W. T. Tsang, “Progress in chemical beam epitaxy”, J. Crystal Growth 105, 1–29 (1990)
For a recent discussion of envelope function models, including discussion of the boundary conditions, see M. G. Burt, “The justification for applying the effective-mass approximation to microstructures”, J. Phys: Condens. Matter 4, 6651–6690 (1992)
see, e.g., C. Weisbuch, “Fundamental properties of III-V semiconductor two-dimensional quantized structures: the basis for optical and electronic device applications”, in “Semiconductors and Semimetals”, vol. 24, ed. R. Dingle (Academic Press, New York, 1987), pp 1–117
D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, and W. Wiegmann, “Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures”, IEEE J. Quantum Electron. 20, 265–275 (1984)
S. Schmitt-Rink, D. S. Chemla, and D. A. B. Miller, “Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structures”, Phys. Rev. B 32 6601–6609 (1985)
P. W. Smith, Y. Silberberg, and D. A. B. Miller, “Mode locking of semiconductor diode lasers using saturable excitonic nonlinearities”, J. Opt. Soc. Am. B2, 1228–1236 (1985).
Y. K. Chen, M. C. Wu, T. Tanbun-Ek, R. A. Logan, and M. A. Chin, “Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers”, Appl. Phys. Lett. 58, 1253–1255 (1991).
U. Keller, G. W. ’t Hooft, W. H. Knox, and J. E. Cunningham, “Femtosecond pulses from a continuously self-starting passively mode-locked Ti:sapphire laser”, Optics Lett. 16, 1022–1024 (1991)
D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the bandgap of quantum well structures”, Phys. Rev. B 32, 1043–1060 (1985)
D. A. B. Miller, J. S. Weiner, and D. S. Chemla, “Electric-field dependence of linear optical properties of quantum well structures: waveguide electroabsorption and sum rules”, IEEE J. Quantum Electron. QE-22, 1816–1830 (1986)
G. D. Boyd, D. A. B. Miller, D. S. Chemla, S. L. McCall, A. C. Gossard, and J. H. English, “Multiple quantum well reflection modulator”, Appl. Phys. Lett. 50, 1119–1121 (1987)
see, e.g., M. Whitehead, A. Rivers, G. Parry, and J. S. Roberts, “A very low voltage, normally-off asymmetric Fabry-Perot reflection modulator”, Electronics Lett. 26, 1588–1590 (1990)
A. M. Fox, D. A. B. Miller, G. Livescu, J. E. Cunningham, and W. Y. Jan, “Quantum well carrier sweep out: relation to electroabsorption and exciton saturation”, IEEE J. Quantum Electron. 27, 2281–2295 (1991)
J. A. Cavaillès, D. A. B. Miller, J. E. Cunningham, P. Li Kam Wa, and A. Miller, “Simultaneous measurements of electron and hole sweep-out from quantum wells and modeling of photoinduced field screening dynamics”, IEEE J. Quantum Electron. 28, 2486–2497 (1992)
G. D. Boyd, J. A. Cavaillès, L. M. F. Chirovsky, and D. A. B. Miller, “Wavelength dependence of saturation and thermal effects in multiple quantum well modulators”, Appl. Phys. Lett. 63, 1715–1717 (1993)
J. S. Weiner, D. A. B. Miller, and D. S. Chemla, “Quadratic electro-optic effect due to the quantum-confined Stark effect in quantum wells”, Appl. Phys. Lett. 50, 842–844 (1987)
J. E. Zucker, K. L. Jones, M. G. Young, B. I. Miller, and U. Koren, “Compact directional coupler switches using quantum well electrorefraction”, Appl. Phys. Lett. 55, 2280–2282 (1989)
D. A. B. Miller, D. S. Chemla, T. C. Damen, T. H. Wood, C. A. Burrus, A. C. Gossard, and W. Wiegmann, “The quantum well self-electrooptic effect device: optoelectronic bistability and oscillation, and self linearized modulation”, IEEE J. Quantum Electron. QE-21, 1462–1476 (1985)
D. A. B. Miller, “Quantum-well self-electrooptic effect devices”, Optical and Quantum Electron. 22, S61–S98 (1990)
A. L. Lentine, H. S. Hinton, D. A. B. Miller, J. E. Henry, J. E. Cunningham, and L. M. F. Chirovsky, “Symmetric self-electrooptic effect device: optical set-reset latch, differential logic gate, and differential modulator/detector”, IEEE J. Quantum Electron. 25, 1928–1936 (1989)
M. E. Prise, “Optical computing using self-electro-optic effect devices” in “Digital Optical Computing”, ed. R. A. Athale, SPIE Critical Reviews of Optical Science and Technology, CR35, 3–27 (1990).
M. E. Prise et al., “Optical digital processor using arrays of symmetric self-electro-optic-effect devices”, Appl. Optics, 30, 2287–2296 (1991).
H. S. Hinton and D. A. B. Miller, “Free-Space Photonics in Switching”, AT&T Technical Journal, 71, No. 1 (Jan/Feb), 84–92 (1992).
F. B. McCormick, T. J. Cloonan, F. A. P. Tooley, A. L. Lentine, J. M. Sasian, J. L. Brubaker, R. L. Morrison, S. L. Walker, R. J. Crisci, R. A. Novotny, S. J. Hinterlong, H. S. Hinton, and E. Kerbis, “Six-stage digital free-space optical switching network using symmetric self-electro-optic-effect devices”, Appl. Optics 32, 5153–5171 (1993).
A. L. Lentine, D. A. B. Miller, J. E. Henry, J. E. Cunningham, and L. M. F. Chirovsky, “Multistate self-electrooptic effect devices”, IEEE J. Quantum Electron. 25, 1921–1927 (1989)
A. L. Lentine, D. A. B. Miller, J. E. Henry, J. E. Cunningham, L. M. F. Chirovsky, and L. A. D’Asaro, “Optical logic using electrically connected quantum well PIN diode modulators and detectors”, Appl. Optics 29, 2153–2163 (1990)
D. A. B. Miller, “Novel analog self-electrooptic-effect devices”, IEEE J. Quantum Electron. 29, 678–698 (1993).
E. A. de Souza, L. Carraresi, G. D. Boyd, and D. A. B. Miller, “Analog differential self-linearized quantum-well self-electro-optic-effect modulator”, Optics Lett. 18, 974–976 (1993)
D. A. B. Miller, “Optics for low-energy communication inside digital processors: quantum detectors, sources, and modulators as efficient impedance converters”, Optics Lett. 14, 146–148 (1989)
D. A. B. Miller, M. D. Feuer, T. Y. Chang, S. C. Shunk, J. E. Henry, D. J. Burrows, and D. S. Chemla, “Field-effect transistor self-electrooptic effect device: integrated photodiode, quantum well modulator and transistor”, IEEE Phot. Tech. Lett. 1, 61–64 (1989)
L. A. D’Asaro, L. M. F. Chirovsky, E. J. Laskowski, S. S. Pei, T. K. Woodward, A. L. Lentine, R. E. Leibenguth, J. W. Focht, J. M. Freund, G. G. Guth, and L. E. Smith, “Batch fabrication and Operation of GaAs-AlGaAs field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arrays”, IEEE J. Quantum Electron. 29, 670–677 (1993)
A. L. Lentine, F. B. McCormick, T. J. Cloonan, J. M. Sasian, R. L. Morrison, M. G. Beckman, S. L. Walker, M. J. Wojcik, S. J. Hinterlong, R. J. Crisci, R. A. Novotny, and H. S. Hinton, “A five stage free-space switching network using arrays of FET-SEED switching nodes”, Conference on Lasers and Electrooptics, May 2–7, 1993, Baltimore, Maryland, Postdeadline Paper CPD24 (Optical Society of America, 1993)
K. W. Goossen, G. D. Boyd, J. E. Cunningham, W. Y. Jan, D. A. B. Miller, D. S. Chemla, and R. M. Lum, “GaAs-AlGaAs multiquantum well reflection modulators grown on GaAs and silicon substrates”, IEEE Photonics Tech. Lett. 1, 304–306 (1989)
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Miller, D.A.B. (1995). Quantum Well Optical Switching Devices. In: Burstein, E., Weisbuch, C. (eds) Confined Electrons and Photons. NATO ASI Series, vol 340. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-1963-8_22
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DOI: https://doi.org/10.1007/978-1-4615-1963-8_22
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