Abstract
The potential application of Langmuir-Blodgett-deposited films in microelectronics is discussed. The application areas which appear most promising are those requiring near perfect and uniformly thick films in the thickness range 2.5–50 nm. Three areas are discussed: the use of Langmuir-Blodgett films as electron resists in submicron device fabrication; the use of these films as insulators in metal-insulator-semiconductor (MIS) structures in which the semiconductor is a compound one; and the use of Langmuir-Blodgett films as tunneling barriers in Josephson junction electronic circuits. It is pointed out that, while preliminary evidence indicates high potential payoff for these films, the amount of data and research is very limited.
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© 1984 Plenum Press, New York
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Thompson, E.D. (1984). Langmuir-Blodgett Films in Microelectronics. In: Adey, W.R., Lawrence, A.F. (eds) Nonlinear Electrodynamics in Biological Systems. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2789-9_17
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DOI: https://doi.org/10.1007/978-1-4613-2789-9_17
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