Abstract
We discuss the formation mechanism of GaN nanowires (NWs) with various shapes grown on Si(111) by using a plasma-assisted molecular-beam epitaxy. The GaN NWs have not only symmetrical structures but also various features such as reverse-mesa and reverse-funnel shapes. To manipulate the shape of GaN NWs, we controlled the growth kinetics of gallium (Ga) atoms by varying V/III ratio, defined as the ratio of the nitrogen (N) flux to the Ga flux, and the growth time. Narrow linewidth broadenings of the x-ray diffraction rocking curves and the coherent crystal structure, which are confirmed by using Cs-corrected transmission electron microscope images, indicate the formation of highly crystalline GaN NWs. The formation of GaN NWs, particularly reverse-funnel shaped NWs (RFS-NWs), can be explained by using the so-called wedding-cake growth mechanism, which is related to a reduction in the number of Ga atoms reaching the top surfaces of the GaN NWs from the surface of SiNx/Si(111) as the height of the GaN NWs increases. Photoluminescence spectra from the GaN RFS-NWs show a double-peak feature at wavelengths of 361.79 and 373.58 nm, which is attributed to two different widths of the GaN NWs in the vertical direction.
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References
C. S. Kim et al., J. Korean Phys. Soc. 57, 793 (2010).
S. Han et al., J. Electron. Mater. 47, 944 (2018).
G. Avit et al., Nano Lett. 14, 559 (2014).
C. B. Maliakkal et al., Nano Lett. 16, 7632 (2016).
D. W. Park et al., Sci. Rep. 5, 16652 (2015).
Y. Wang, V. Schmidt, S. Senz and U. Gösele, Nanotechnology 1, 186 (2006).
S. Eftychis et al., J. Cryst. Growth 442, 8 (2016).
S. Fernández-Garrido et al., Nano Lett. 13, 3274 (2013).
S. Han et al., ACS Appl. Mater. Interfaces 10, 38173 (2018).
I. Choi et al., Nanotechnology 29, 315603 (2018).
C. Zhao et al., Prog. Quantum Electron. 61, 1 (2018).
V. Consonni, A. Trampert, L. Geelhaar and H. Riechert, Appl. Phys. Lett. 99, 033102 (2011).
F. Gao et al., Small 13, 1603775 (2017).
R. K. Debnath et al., Appl. Phys. Lett. 90, 123117 (2007).
K. A. Bertness et al., J. Electron. Mater. 35, 576 (2006).
G. Santana et al., Materials 6, 1050 (2013).
V. M. Kaganer et al., J. Phys. D: Appl. Phys. 48, 385105 (2015).
V. P. Kladko et al., J. Cryst. Growth 401, 347 (2014).
S. Eftychis et al., J. Cryst. Growth 514, 89 (2019).
F. Meng, S. A. Morin, A. Forticaux and S. Jin, Acc. Chem. Res. 46, 1616 (2013).
M. J. Bierman et al., Science 320, 1060 (2008).
X. Yin et al., Nano Lett. 15, 7766 (2015).
G. Ehrlich and F. G. Hudda, J. Chem. Phys. 44, 1039 (1966).
R. L. Schwoebel and E. J. Shipsey, J. Appl. Phys. 37, 3682 (1966).
J. Krug, Physica A 313, 47 (2002).
C. H. Wu et al., J. Cryst. Growth 454, 71 (2016).
L. W. Tu, C. L. Hsiao, T. W. Chi and I. Lo, Appl. Phys. Lett. 82, 1601 (2003).
Y. H. Ra, R. Navamathavan, J. H. Park and C. R. Lee, Nano Lett. 13, 3506 (2013).
D. Kandi, S. Martha and K. M. Parida, Int. J. Hydrog. Energy 42, 9467 (2017).
K. O’Donnell and X. Chen, Appl. Phys. Lett. 58, 2924 (1991).
Acknowledgments
The work was supported in part by the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A1B07043442), by the Civil-Military Technology Cooperation Program (No. 19-CM-BD-05), and by the “Research Base Construction Fund Support Program” funded by Jeonbuk (Chonbuk) National University in 2018.
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Noh, S., Han, S., Choi, I. et al. Formation Mechanism of GaN Nanowires with Various Shapes on Si(111). J. Korean Phys. Soc. 77, 247–252 (2020). https://doi.org/10.3938/jkps.77.247
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DOI: https://doi.org/10.3938/jkps.77.247