Abstract
The hydride vapor-phase epitaxy (HVPE) method was used to deposit high-quality InN layers on GaN inter-layer/sapphire (0001) structures that had been fabricated by using either the HVPE method or the metal-organic chemical-phase deposition (MOCVD) method. The effects of the group V/III ratio and different GaN inter-layers on the crystal quality of the InN layers were systemically investigated. The InN layer grown at a low Group V/III ratio revealed a high crystal quality with a two-dimensional (2D) growth mode. Also, the 110.7-nm-thick InN layer grown by using HVPE on a GaN inter-layer/sapphire (0001) substrate structure that had been fabricated by using MOCVD had a high crystal quality, with the full width at half maximum (FWHM) of the InN X-ray diffraction (XRD) peak being about 844 arcsec, and a smooth surface with an atomic force microscopy (AFM) roughness of about 0.07 nm. On the other hand, the 145.7-nm-thick InN layer grown by using HVPE on a GaN inter-layer/sapphire (0001) substrate structure that had been fabricated by using the HVPE method had a lower crystal quality, a FWHM value for the InN (0002) peak of about 2772 arcsec, and a surface roughness of about 3.73 nm. In addition, the peak of the E2 (high) phonon mode for the 110.7-nm-thick InN layer grown by using HVPE on a GaN inter-layer/sapphire (0001) structure that had been fabricated by using MOCVD was detected at 491 cm -1 and had a FWHM of 9.9 cm-1. As a result, InN layers grown by using HVPE on GaN inter-layer/sapphire (0001) substrate structures fabricated by using MOCVD have a high crystal quality and a reduced Raman value, which agrees well with the results of the XRD analysis.
Article PDF
Similar content being viewed by others
Explore related subjects
Discover the latest articles, news and stories from top researchers in related subjects.Avoid common mistakes on your manuscript.
References
A. G. Bhuiyan, A. Hashimoto and A. Yamamoto, J. Appl. Phys. 94, 2779 (2003).
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
T. Matsuoka, H. Okamoto, M. Nakao, H. Harima and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
S. N. Mohammad and H. Morkoç, Prog. Quant. Electron. 20, 361 (1996).
W. C. Chen, A. Y. Kuo, F. I. Lai, W. T. Lin and C. N. Hsiao, Thin Solid Films 529, 169 (2013).
M. Jamil, H. P. Zhao, J. B. Higgins and N. Tansu, J. Cryst. Growth 310, 4947 (2008).
J. Kikuchi, Y. Nishizawa, H. Murakami, Y. Kumagai and A. Koukitu, Physica Status Solidi C 4, 2419 (2007).
J. Kikuchi, Y. Nishizawa, H. Murakami, Y. Kumagal and A. Koukitu, Jpn. J. Appl. Phys. 45, L1203 (2006).
Y. Kumagai, H. Adachi, A. Otake, Y. Higashikawa, R. Togashi, H. Murakami and A. Koukitu, Physica Status Solidi C 7, 2022 (2010).
N. Takahashi, J. Ogasawara and A. Koukitu, J. Cryst. Growth 172, 298 (1997).
N. Takahashi, R. Matsumoto, A. Koukitu and H. Seki, Jpn. J. Appl. Phys. 36, L743 (1997).
Y. Kumagal, J. Kikuchi, Y. Nishizawa, H. Murakami and A. Koukitu, J. Cryst. Growth 300, 57 (2007).
C. J. Lua, L. A. Bendersky, H. Lu and W. J. Schaff, Appl. Phys. Lett. 83, 2817 (2003).
P. Ruterana, A. L. Syrkin, E. Monroy, E. Valcheva and K. Kirilov, Physica Status Solidi C 7, 1301 (2010).
M. C. Johnson, S. L. Konsek, A. Zettl and E. D. Bourret-Courchesne, J. Cryst. Growth 272, 400 (2004).
P. Singh, P. Ruterana, M. Morales, F. Goubilleau, M. Wojdak, J. F. Carlin, M. Ilegems and D. Chateigner, Superlattice Microst. 36, 537 (2004).
M. Jamil, H. Zhao, B. Higgins and N. Tansu, J. Cryst. Growth 310, 4947 (2008).
H. Wang, D. S. Jiang, J. J. Zhu, D. G. Zhao, Z. S. Liu, Y. T. Wang, S. M. Zhang and H. Yang, Semicond. Sci. Technol. 24, 055001 (2009).
J. Zhou, Q. Huang, J. Li, D. Cai and J. Kang, Nanoscale Res. Lett. 9, 5 (2014).
W. K. Luo, J. J. Wu, J. Goldsmith, Y. H. Du, T. J. Yu, Z. J. Yang and G. Y. Zhang, J. Cryst. Growth 340, 18 (2012).
B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars and J. S. Speck, Appl. Phys. Lett. 68, 643 (1996).
K. J. Lee, E. H. Shin and K. Y. Lim, Appl. Phys. Lett. 85, 1502 (2004).
H. Harima, J. Phys. Conden. Matt. 14, R967 (2002).
V. Y. Davydov, V. V. Emtsev, I. N. Goncharuk, A. N. Smirnov, V. D. Petrikov, V. V. Mamutin, V. A. Vekshin and S. V. Ivanov, Appl. Phys. Lett. 75, 3297 (1999).
J. G. Kim, Y. Kamei, A. Kimura, N. Hasuike, H. Harima, K. Kisoda, Y. H. Liu and T. Matsuoka, Physica Status Solidi B 249, 779 (2012).
X. Wang, S. Che, Y. Ishitani and A. Yoshikawa, Appl. Phys. Lett. 89, 171907 (2006).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ha, JH., Wang, J., Lee, WJ. et al. Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method. Journal of the Korean Physical Society 66, 994–1000 (2015). https://doi.org/10.3938/jkps.66.994
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.66.994