Abstract
The structure and composition of higher manganese silicide (HMS) films on Si(111) substrate are studied by high-resolution transmission electron microscopy, electron diffraction, and energy-dispersive X-ray spectroscopy. The formation of Mn4Si7 HMS film by the deposition of the gas-phase manganese onto silicon at 1040°C is observed. The film/substrate interface is semicoherent and does not contain any intermediate layer. The interface structure is refined by computer simulation. The orientation relationship \(\left( {\overline 1 \overline 2 4} \right)\left[ {443} \right]M{n_4}S{i_7}||\left( {1\overline 1 \overline 1 } \right)\left[ {001} \right]Si\) between the film and substrate is determined.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov, I. V. Ernst, and V. K. Zaitsev, Electrical and Photoelectrical Properties of Heterophase Structures Based on Silicon and Manganese Silicide (MERIYUS, Tashkent, 2014) [in Russian].
C. A. Nolph, E. Vescovo, and P. Reinke, Appl. Surf. Sci. 255, 7642 (2009).
U. Gottlieb, A. Sulpice, B. Lambert-Andron, and O. Laborde, J. Alloys Comp. 361, 13 (2003). ICSD #97393
O. Schwomma, A. Presinger, H. Nowotny, and A. Wittmann, Monatsh. Chem. 95, 1527 (1964). ICSD #43280
H. W. Knott, M. H. Muller, and L. Heaton, Acta Crystallogr. 23, 549 (1967). ICSD #15339
G. Zwilling and H. Nowotny, Monatsh. Chem. 104, 668 (1973). ICSD #23789
L. I. Petrova, M. I. Fedorov, V. K. Zaitsev, and A. E. Engalychev, Inorg. Mater. 49, 355 (2013).
L. M. Levinson, J. Solid State Chem. 6, 126 (1973).
S. Teichert, S. Schwendler, D. K. Sarkar, A. Mogilatenko, M. Falke, G. Beddies, and H. J. Hinneberg, J. Cryst. Growth 227, 882 (2001).
A. Mogilatenko, M. Falke, S. Teichert, S. Schwendler, D. K. Sarkar, and H. Hinneberg, Microelectron. Eng. 60, 247 (2002).—
M. Kohira, Y. Souno, T. Matsuyama, H. Tatsuoka, I. J. Ohsugi, I. A. Nishida, and H. Kuwabara, Appl. Surf. Sci. 216, 614 (2003).
V. V. Klechkovskaya, T. S. Kamilov, S. I. Adasheva, S. S. Khudaiberdyev, and V. I. Muratova, Crystallogr. Rep. 39, 815 (1994).
T. S. Kamilov, D. K. Kabilov, I. S. Samiev, Kh. Kh. Khusnutdinova, R. A. Muminov, and V. V. Klechkovskaya, Tech. Phys. 50, 1102 (2005).
P. Stadelmann, The Java Electron Microscopy Software JEMS (2012). http://cimewww.epfl.ch.
M. Volmer and A. Weber, Z. Phys. Chem. 119, 277 (1926).
S. N. Kukushkin and A. V. Osipov, Phys. Usp. 41, 983 (1998).
Z. Wang, Y. Wu, and Y. He, Int. J. Mod. Phys. B 18 (1), 87 (2004).
E. I. Suvorova and V. V. Klechkovskaya, Crystallogr. Rep. 58, 854 (2013).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © Andrey S. Orekhov, T.S. Kamilov, Anton S. Orekhov, N.A. Arkharova, E.V. Rakova, V.V. Klechkovskaya, 2016, published in Rossiiskie Nanotekhnologii, 2016, Vol. 11, Nos. 9–10.
Rights and permissions
About this article
Cite this article
Orekhov, A.S., Kamilov, T.S., Orekhov, A.S. et al. Electron microscopy characterization of higher manganese silicide film structure on silicon. Nanotechnol Russia 11, 610–616 (2016). https://doi.org/10.1134/S1995078016050128
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1995078016050128