Abstract
Ta2O5 films of different thicknesses (20–100 nm) synthesized by the molecular layer deposition method on p-type silicon substrates and thermally oxidized silicon substrates have been studied by the methods of high-frequency capacitance–voltage characteristics and photoluminescence. A hole-conduction channel is found to form in the Si–Ta2O5–field electrode system. A model of the electronic structure of Ta2O5 films is proposed based on an analysis of the measured PL spectra and performed electrical investigations.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
V. A. Gritsenko, I. E. Tyschenko, V. P. Popov, and T. V. Perevalov, Dielectrics in Nanoelectronics (Izd. SO RAN, Novosibirsk, 2010) [in Russian].
T. V. Perevalov and V. A. Gritsenko, Phys. Usp. 53 (6), 561 (2010).
V. E. Drozd, A. P. Baraban, and I. O. Nikiforova, Appl. Surf. Sci. 83, 583 (1994).
J. Robertson and R. M. Wallace, Mater. Sci. Eng. R. 88, 1 (2015).
A. P. Baraban, V. A. Dmitriev, O. P. Matveeva, and V. A. Prokof’ev, Vestn. S.-Peterb. Univ., Ser. 4: Fiz., Khim. 4, 49 (2012).
A. P. Baraban, V. A. Dmitriev, Yu. B. Petrov, and K. A. Timofeeva, Semiconductors 47 (13), 1711 (2013).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.P. Baraban, V.A. Dmitriev, V.A. Prokof’ev, V.E. Drozd, E.O. Filatova, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 7, pp. 10–16.
Rights and permissions
About this article
Cite this article
Baraban, A.P., Dmitriev, V.A., Prokof’ev, V.A. et al. Photoluminescence of Ta2O5 films formed by the molecular layer deposition method. Tech. Phys. Lett. 42, 341–343 (2016). https://doi.org/10.1134/S1063785016040040
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785016040040