Abstract
It has been shown that, in the GeSi/Si(001) heterosystem at lattice parameter mismatches of ∼2% and more, a small critical thickness of the introduction of dislocations leads to the implementation of the mechanism of induced nucleation of misfit dislocations. This mechanism consists in that the stress field of an already existing 60° dislocation provokes introduction of a secondary 60° dislocation with an opposite-sign screw component. As a result of the interaction of such dislocation pairs, edge misfit dislocations are formed, which do control the plastic relaxation process. This mechanism is most efficient when dislocations are introduced at the GeSi film thickness only slightly exceeding the critical thickness of the introduction of 60° dislocations, and there are threading dislocations. The dominant type of misfit dislocations (60° or edge) in the Ge-on-Si(001) system can be controlled by varying the mismatch parameter in the heteropair.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
M. Bossi and G. Attolini, Prog. Cryst. Growth Charact. Mater. 56, 146 (2010).
E. A. Fitzgerald, Y. H. Xie, M. L. Green, D. Brasen, A. R. Kortan, J. Michel, Y.-J. Mii, and B. E. Weir, Appl. Phys. Lett. 59, 811 (1991).
M. Currie, S.B. Samavedam, T. C. Langdo, W. Leitz, and E. A. Fitzgerald, Appl. Phys. Lett. 72, 1718 (1998).
S. B. Samavedam, M. Currie, T. Langdo, and E. A. Fitzgerald, Appl. Phys. Lett. 73, 2125 (1998).
K. Chilukuri, M. J. Mori, C. L. Dohrman, and E. A. Fitzgerald, Semicond. Sci. Technol. 22, 29 (2007).
C. Rosenblad, H. R. Deller, A. Dommann, T. Meyer, P. Schroeter, and H. von Känel, J. Vac. Sci. Technol., A 16, 2785 (1998).
R. Ginige, B. Corbett, M. Modreanu, C. Barrett, J. Hilgarth, G. Isella, D. Chrastina, and H. von Känel, Semicond. Sci. Technol. 21, 775 (2006).
G. Isella, J. Osmond, M. Kummer, R. Kaufmann, and H. von Känel, Semicond. Sci. Technol. 22, S26 (2007).
Yu. B. Bolkhovityanov, A. S. Deryabin, A. K. Gutakovskii, and L. V. Sokolov, Acta Mater. 61, 617 (2013).
S. Mader, A. E. Blakeslee, and J. J. Angilello, J. Appl. Phys. 45, 4730 (1974).
E. A. Fitzgerald, D. G. Ast, P. D. Kirchne, G. D. Pettit, and J. M. Woodall, J. Appl. Phys. 63, 693 (1988).
V. I. Vdovin, J. Cryst. Growth 172, 58 (1997).
E. P. Kvam, D. M. Maher, and C. J. Humpreys, J. Mater. Res. 5, 1900 (1990).
J. Narayan and S. Sharan, Mater. Sci. Eng., B 10, 261 (1991).
S. A. Dregia and J. P. Hirsh, J. Appl. Phys. 69, 2169 (1991).
Yu. B. Bolkhovityanov, A. S. Deryabin, A. K. Gutakovskii, and L. V. Sokolov, J. Cryst. Growth 312, 3080 (2010).
Yu. B. Bolkhovityanov, A. S. Deryabin, A. K. Gutakovskii, and L. V. Sokolov, J. Cryst. Growth 310, 3422 (2008).
Yu. B. Bolkhovityanov, A. S. Deryabin, A. K. Gutakovskii, and L. V. Sokolov, J. Appl. Phys. 109, 123519 (2011).
J. S. Speck, M. A. Brewer, G. Beltz, A. E. Romanov, and W. Pompe, J. Appl. Phys. 80, 3808 (1996).
T. J. Gosling, J. Appl. Phys. 74, 5415 (1993).
K. H. Chang, P. K. Bhattacharya, and R. Gibala, J. Appl. Phys. 66, 2993 (1989).
Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, and L. V. Sokolov, Phys. Solid State 56(2), 247 (2014).
Yu. B. Bolkhovityanov, A. S. Deryabin, A. K. Gutakovskii, M. A. Revenko, and L. V. Sokolov, J. Cryst. Growth 293, 247 (2006).
R. S. Goldman, K. L. Kavanagh, H. H. Wieder, S. N. Ehrlich, and R. M. Feenstra, J. Appl. Phys. 83, 5137 (1998).
Y. B. Bolkhovityanov and L. V. Sokolov, Semicond. Sci. Technol. 27, 043001 (2012).
P. Hirel, J. Godet, S. Brochard, L. Pizzagall, and P. Beauchamp, Phys. Rev. B: Condens. Matter 78, 064109 (2008).
L. Zuo, A. H. W. Ngan, and G. P. Zheng, Phys. Rev. Lett. 94, 095501 (2005).
T. Zhu, J. Li, A. Samanta, A. Leach, and K. Gall, Phys. Rev. Lett. 100, 025502 (2008).
J. Hornstra, J. Phys. Chem. Solids 5, 129 (1958).
A. Vila, A. Cornet, and J. R. Morante, Appl. Phys. Lett. 68, 1244 (1996).
J. N. Stirman, P. A. Crozier, D. J. Smith, F. Philipp, G. Brill, and S. Sivananthan, Appl. Phys. Lett. 84, 2530 (2004).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © Yu.B. Bolkhovityanov, A.K. Gutakovskii, A.S. Deryabin, L.V. Sokolov, 2015, published in Fizika Tverdogo Tela, 2015, Vol. 57, No. 4, pp. 746–752.
Rights and permissions
About this article
Cite this article
Bolkhovityanov, Y.B., Gutakovskii, A.K., Deryabin, A.S. et al. Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness. Phys. Solid State 57, 765–770 (2015). https://doi.org/10.1134/S1063783415040071
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783415040071