Abstract
The properties of silicon-on-insulator films implanted with high hydrogen-ion doses (∼50 at %) and annealed under a pressure of 10.5 kbar are studied using the Raman scattering (RS) method. A high degree of optical-phonon localization is detected in the films under study, which is retained to an annealing temperature of ∼1000°C and is explained by the formation of silicon nanocrystals. It is found that the activation energy of annealing of the structural relaxation of dangling bonds in films with a high hydrogen content is independent of the annealing pressure. The activation energy of growth of the crystalline phase, calculated from RS spectra is ∼1.5 eV and is independent of pressure. The effect of hydrostatic pressure consists only in a decrease in the frequency factor limiting Si-Si bond relaxation during ordering.
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Original Russian Text © I.E. Tyschenko, V.A. Volodin, V.V. Kozlovski, V.P. Popov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 10, pp. 1339–1343.
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Tyschenko, I.E., Volodin, V.A., Kozlovski, V.V. et al. Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose. Semiconductors 48, 1303–1307 (2014). https://doi.org/10.1134/S1063782614100285
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DOI: https://doi.org/10.1134/S1063782614100285