Abstract
A new technique of growing nanocrytalline silicon (nc-Si) thin films is suggested. The technique involves the centrifuge-assisted size-selective deposition of nanoparticles from a colloidal solution (sol) containing nc-Si powders. The structural and optical parameters of the initial nc-Si powders and films deposited by the newly suggested procedure are studied by transmission electron microscopy and analysis of absorption spectra and Raman spectra. The absorption coefficient of the nc-Si films increases with decreasing dimensions of the constituent nanoparticles. The experimentally measured band gap of the films, E g, is widened from 1.8 to 2.2. eV on etching the nc-Si powders used for deposition of the corresponding films. On the basis of the analysis of the Raman spectra, it is suggested that the amorphous component is involved in the nc-Si powders and films due to oxygen atoms arranged at the nanoparticle surface.
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Original Russian Text © S.G. Dorofeev, N.N. Kononov, A.A. Ishchenko, R.B. Vasil’ev, M.A. Goldschtrakh, K.V. Zaitseva, V.V. Koltashev, V.G. Plotnichenko, O.V. Tikhonevich, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 11, pp. 1460–1467.
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Dorofeev, S.G., Kononov, N.N., Ishchenko, A.A. et al. Optical and structural properties of thin films precipitated from the sol of silicon nanoparticles. Semiconductors 43, 1420–1427 (2009). https://doi.org/10.1134/S1063782609110050
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DOI: https://doi.org/10.1134/S1063782609110050