Abstract
Atomic-force microscopy is used to study the behavior of an array of Ge islands formed by molecular-beam epitaxy on an Si (100) surface in the presence of an antimony flux incident on the surface. It is shown that, as the Sb flux increases to a certain critical level, the surface density of the islands increases; however, if this critical level is exceeded, nucleation of the islands is suppressed and mesoscopic small-height clusters are observed on the surface. This effect is explained qualitatively in the context of a kinetic model of the islands’ formation in heteroepitaxial systems mismatched with respect to their lattice parameters.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 5, 2005, pp. 577–581.
Original Russian Text Copyright © 2005 by Cirlin, Dubrovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Tonkikh, Sibirev, Ustinov, Werner.
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Cirlin, G.E., Dubrovskii, V.G., Tonkikh, A.A. et al. Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb. Semiconductors 39, 547–551 (2005). https://doi.org/10.1134/1.1923563
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DOI: https://doi.org/10.1134/1.1923563