Abstract
The effect of the growth temperature on the density, lateral size, and height of InAs-GaAs quantum dots (QD) has been studied by transmission electron microscopy. With the growth temperature increasing from 450 to 520°C, the density and height of QDs decrease, whereas their lateral size increases; i.e., the QDs are flattened. The blue shift of the photoluminescence line indicates decreasing QD volume. The observed behavior is in agreement with the thermodynamic model of QD formation. The effect of lowering the substrate temperature immediately after the formation of QDs on the QD parameters has been studied. On lowering the temperature, the lateral size of QDs decreases and their density increases; i.e., the parameters of QD arrays tend to acquire the equilibrium parameters corresponding at the temperature to which the cooling is done. The QD height rapidly increases with cooling and may exceed the equilibrium value for a finite time of cooling, which enables fabrication of QD arrays with a prescribed ratio between height and lateral size by choosing the time of cooling.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dots Heterostructures (Wiley, Baffins Line, Chichester, 1999).
N. N. Ledentsov, V. A. Shchukin, M. Grundmann, et al., Phys. Rev. B 54, 8743 (1996).
I. Mukhametzhanov, R. Heitz, J. Zeng, et al., Appl. Phys. Lett. 73, 1841 (1998).
M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik, et al., Phys. Rev. B 62, 16671 (2000).
N. N. Ledentsov, M. Grundmann, N. Kirstaedter, et al., Solid-State Electron. 40, 785 (1996).
V. A. Shchukin, N. N. Ledentsov, V. M. Ustinov, et al., Mater. Res. Soc. Symp. Proc. 618, 79 (2000).
A. Madhukar, in Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, Ed. by K. Eberl, P. Petroff, and P. Demeester (Kluwer, Dordrecht, 1995), p. 19.
A. L. Barabási, Appl. Phys. Lett. 70, 2565 (1997).
D. E. Jesson, K. M. Chen, S. J. Pennycook, et al., Phys. Rev. Lett. 77, 1330 (1996).
V. A. Shchukin, N. N. Ledentsov, P. S. Kop’ev, and D. Bimberg, Phys. Rev. Lett. 75, 2968 (1995).
I. Daruka and A. L. Barabási, Phys. Rev. Lett. 79, 3708 (1997).
G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, et al., Science 279, 353 (1998).
V. A. Shchukin, N. N. Ledentsov, and D. Bimberg, Epitaxy of Nanostructures (Springer, Berlin, 2002), p. 320.
V. A. Shchukin, N. N. Ledentsov, and D. Bimberg, Mater. Res. Soc. Symp. Proc. 583, 23 (2000).
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 7, 2003, pp. 890–895.
Original Russian Text Copyright © 2003 by Cherkashin, Maksimov, Makarov, Shchukin, Ustinov, Lukovskaya, Musikhin, Cirlin, Bert, Alferov, Ledentsov, Bimberg.
Rights and permissions
About this article
Cite this article
Cherkashin, N.A., Maksimov, M.V., Makarov, A.G. et al. Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode. Semiconductors 37, 861–865 (2003). https://doi.org/10.1134/1.1592865
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1592865