Abstract
Photochemical transformations occurring in thin films of inorganic photoresists under UV irradiation from an excimer laser are analyzed theoretically. It is shown that the optimization of the light intensity and irradiation dose can make the transition region between the exposed and unexposed parts of a film narrower, thereby improving the image quality in photolithography.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
G. N. Berezin, A. V. Nikitin, and R. A. Suris, Optical Foundations of Contact Lithography (Radio i Svyaz’, Moscow, 1982).
H. I. Smith, J. Vac. Sci. Technol. B 6(1), 346 (1988).
E. G. Barash, A. Yu. Kabin, V. M. Lyubin, and R. P. Seisyan, Zh. Tekh. Fiz. 62(3), 106 (1992) [Sov. Phys. Tech. Phys. 37, 292 (1992)].
L. G. Gladysheva, N. A. Kaliteevskaya, R. P. Seisyan, and D. V. Smirnov, Pis’ma Zh. Tekh. Fiz. 22(15), 91 (1996) [Tech. Phys. Lett. 22, 640 (1996)].
N. A. Kaliteevskaya and R. P. Seisyan, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34(7), 857 (2000) [Semiconductors 34, 825 (2000)].
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 2, 2001, pp. 233–236.
Original Russian Text Copyright © 2001 by Kaliteevskaya, Se\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\)syan.
Rights and permissions
About this article
Cite this article
Kaliteevskaya, N.A., Seisyan, R.P. Contrast enhancement in image transfer via interaction of UV radiation with inorganic photoresist films. Semiconductors 35, 226–229 (2001). https://doi.org/10.1134/1.1349937
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1349937