Abstract
Special features corresponding to resonance tunneling of electrons from the Γ valley of GaAs to the X valley of AlAs were observed in the current-voltage characteristics of single-barrier GaAs/AlAs/GaAs heterostructures. Tunneling both via the states related to the two-dimensional X xy and X z subbands and via the related impurity states was detected. It is shown that the energy position of such impurity states is largely controlled by two factors: (i) spatial confinement of the AlAs layer, which influences both the size-quantization energy levels of the X xy and X z subbands and the corresponding binding energies of impurity states, and (ii) the biaxial compression of the AlAs layer due to a mismatch of the AlAs and GaAs lattice parameters, which results in the splitting of the X xy and X z valleys. This made it possible to determine directly the binding energy of the impurity states; this energy was found to be ∼50 meV for the X z valley and ∼70 meV for the X xy valley.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 2, 2001, pp. 206–210.
Original Russian Text Copyright © 2001 by Khanin, Novoselov, Vdovin.
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Khanin, Y.N., Novoselov, K.S. & Vdovin, E.E. Tunneling via impurity states related to the X valley in a thin AlAs barrier. Semiconductors 35, 199–203 (2001). https://doi.org/10.1134/1.1349932
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DOI: https://doi.org/10.1134/1.1349932