Abstract
We present numerical simulations and measurements of shot noise in resonant tunneling structures. We show that when electron-electron interaction through Coulomb force and Pauli exclusion is properly taken into account, the main features of noise behavior of such devices can be correctly predicted. Electron-electron interaction is shown to be responsible for the suppression of shot noise in the positive differential resistance region of the I-V curve, and for the enhancement of shot noise in the negative differential resistance region.
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Iannaccone, G., Lombardi, G., Macucci, M. et al. Simulation and Measurement of Shot Noise in Resonant Tunneling Structures. Analog Integrated Circuits and Signal Processing 24, 73–78 (2000). https://doi.org/10.1023/A:1008325017094
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DOI: https://doi.org/10.1023/A:1008325017094