Abstract
In present work, the role of the oxygen potential (PO2) and oxygen ion (O2−) concentration for removing phosphorus (P) during CaO–SiO2–Al2O3–FexO slag refining was studied by on-line measurement of oxygen activity in molten silicon (Si), FactSage calculation, Raman spectroscopy and nuclear magnetic resonance (NMR) spectroscopy. The results show that the addition of FeO from 0 to 9.25 wt% in slag can increase the activity of dissolved oxygen (a[O]) in Si and the mole fraction of O2− in slag. Moreover, the increase of O2− concentration leads to the increase of non-bridge oxygen (NBO). The value of LP (the partition ratio of phosphorous between slag and Si shows a first increase and then decrease trend and reaches a maximum value of 1.95 at 5 ± 0.1 wt% FeO. It is believed that the increase of a[O] and NBO can promote the removal of P as FeO content is less than 5 ± 0.1 wt%. the chain structure unit (Q2) of silicate network as the main intermediate structure to capture PO43− from the charge compensation of P2O5 by O2− to form the sheet structure unit Q3(Si and P). When FeO content is increased to more than 5 ± 0.1 wt%, LP value gradually decreases although the values of NBO and a[O] are increasing. NBO plays a leading role in this process, it can be speculated that more NBO can depolymerize the Q3 (Si and P) to destroy the stability of P in silicate network. As a result, a mount of PO43− is present at the interface to prevent the oxidation of phosphorous, which leads to the decrease of LP value.
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Acknowledgements
This work was financially supported by National Natural Science Foundation of China (Nos. 51604256 and U1702251), National Key R&D Program of China (2018YFC1901801) and Beijing Natural Science Foundation (2192055).
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Guoyu Qian and Nan Zhang Thurmond are co-first authors.
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Zhang, N., Qian, G., Wang, Z. et al. Role of Oxygen Potential and Oxygen Ions on Phosphorus Removal from Silicon via Addition of FeO into Slag. Silicon 12, 1145–1156 (2020). https://doi.org/10.1007/s12633-019-00201-w
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DOI: https://doi.org/10.1007/s12633-019-00201-w