Abstract
Quantum dots in nanowires (DINWs) are considered as important building blocks for novel nanoscale semiconductor optoelectronic devices. In this paper, pure axial heterojunction InGaN/GaN DINWs are grown by using plasma-assisted molecular beam epitaxy (PA-MBE) system. The InGaN quantum dots (QDs) are disk-like observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The diameter of QDs can be controlled by the growth conditions of nanowires (NWs), while the thickness of QDs can be controlled by the growth time of InGaN. Temperature-dependent photoluminescence (TDPL) measurements demonstrate that the PL peak of DINWs with small and uniform sizes shows a general red shift with increasing temperature. However, the PL peak of DINWs with non-uniform sizes shows an abnormal blue shift with increasing temperature, which is due to different internal quantum efficiencies of the DINWs with different sizes.
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Yanxiong E received his B.S. degree in 2011 from Department of Electronic Engineering, Tsinghua University, and now he is a Ph.D. candidate student in the same Department. His research area is molecular beam epitaxial growth of III-nitrides nanowires and InGaN/GaN nanowire quantum dots and their physical properties.
Zhibiao Hao received his B.S. and Ph.D. degrees in physical electronics from Tsinghua University in 1996 and 2002, respectively, then he joined Tsinghua University and now is a Professor at the Department of Electronic Engineering. He worked as a visiting scholar in University of California, Los Angeles, from 2006 to 2007. His current research interests include molecular beam epitaxy of compound semiconductors such as III-Nitride films and low-dimensional structures, nanostructure optoelectronic devices such as single photon emitters based on quantum dot and microcavity, photodetectors based on quantum transportation.
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E, Y., Hao, Z., Yu, J. et al. Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE. Front. Optoelectron. 9, 318–322 (2016). https://doi.org/10.1007/s12200-016-0613-4
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DOI: https://doi.org/10.1007/s12200-016-0613-4