Abstract
Tungstic oxide (WO3) thin films have been synthesized by wet chemical method, i.e., successive ionic layer adsorption and reaction (SILAR) method. These films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. The XRD pattern revealed the formation of polycrystalline WO3 films. Scanning electron micrographs demonstrate the three-dimensional aggregated irregular extended rod shaped morphology of WO3 thin films. The WO3 film showed a direct band gap of 2.5 eV. The WO3 film exhibited specific capacitance of 266 F·g−1 in 1 M Na2SO4 electrolyte at the scan rate of 10 mVs−1.
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Shinde, N.M., Jagadale, A.D., Kumbhar, V.S. et al. Wet chemical synthesis of WO3 thin films for supercapacitor application. Korean J. Chem. Eng. 32, 974–979 (2015). https://doi.org/10.1007/s11814-014-0323-9
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DOI: https://doi.org/10.1007/s11814-014-0323-9