Abstract
Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.
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This article is dedicated to Professor Chul Soo Lee in commemoration of his retirement from Department of Chemical and Biological Engineering of Korea University.
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Ko, G., Kim, HY., Bang, J. et al. Electrical characterizations of Neutron-irradiated SiC Schottky diodes. Korean J. Chem. Eng. 26, 285–287 (2009). https://doi.org/10.1007/s11814-009-0049-2
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DOI: https://doi.org/10.1007/s11814-009-0049-2