Abstract
Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes (LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition (MOCVD) with different doping concentrations and Al contents in AlxGa1-x As compound. And their optoelectric properties show that the optimal design for tunneling region corresponds to P++ layer with hole concentration up to 1×1020 cm−3, N++ layer electron concentration up to 5×1019 cm−3 and constituent Al0.2Ga0.8As in the tunneling junction region. The optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction (12 mW). Furthermore, the optimized device keeps the same spectral characteristics without introducing excessive voltage droop.
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This work has been supported by the National Key Research and Development Program of China (No. 2017YFB0403101), and the National Natural Science Foundation of China (No.61474096).
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Lin, Hl., Zeng, Xh., Shi, Sm. et al. Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design. Optoelectron. Lett. 15, 113–116 (2019). https://doi.org/10.1007/s11801-019-8113-6
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DOI: https://doi.org/10.1007/s11801-019-8113-6