Abstract
We propose a vertical cavity semiconductor emitting laser (VCSEL) using a coupled-cavity (CC) design to broaden the bandwidths of gain and delay spectra. The structure is formed by constructing a passive cavity coupled with the active cavity. By rendering the strength of the two resonant cavities, the increased gain bandwidth by 340% and the increased delay bandwidth by 800% are achieved as compared with the signal-cavity (SC) VCSEL. The wideband spectra present more square-like passband which is expected for slow light system. By using it, a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality.
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This work has been supported by the National Basic Research Program of China (No.2012CB315704), and the National Natural Science Foundation of China (No.61101053).
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Ma, Yn., Luo, B., Pan, W. et al. Improvement of slow light performance for vertical-cavity surface-emitting laser using coupled cavity structure. Optoelectron. Lett. 8, 405–408 (2012). https://doi.org/10.1007/s11801-012-2302-x
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DOI: https://doi.org/10.1007/s11801-012-2302-x