Abstract
In this paper, a series of boron doped microcrystalline hydrogenated silicon-germanium (p-μc-Si1−xGex:H) was deposited by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) from SiH4 and GeF4 mixtures. The effect of GeF4 concentration on films’ composition, structure and electrical properties was studied. The results show that with the increase of GeF4 concentration, the Ge fraction x increases. The dark conductivity and crystalline volume fraction increase first, and then decrease. When the GC is 4%, p-μc-Si1−xGex:H material with high conductivity, low activation energy (σ=1.68 S/cm, E g= 0.047 eV), high crystalline volume fraction (60%) and with an average transmission coefficient over the long wave region reaching 0.9 at the thickness of 72 nm was achieved. The experimental results were discussed in detail.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
G. Ganguly, T. Lkeda, T. Nishimiya, K. Saitoh, M. Kondo, and A. Matuda Appl.Phys.Lett., 69 (2002), 519.
Jatindra K. Rath, F.D. Tichelaar, and Ruud E.I. Schropp, Solar Energy Material & Solar Cells, 74 (2002), 553.
M. Isomura, K. Nakahata, M. Shima, S. Taira, K. Wakisaka, M. Tanaka, and S. Kiyama, Solar Energy Material & Solar Cells, 74 (2002), 519.
A.K. Barua, Arindam Sarker Swati Ray, Technical Digest of the international, PVSEC-12
T. Matsui, K. Ogata, M. Isomura, and M. Kondo, J. Non-cryst. Solids, 352 (2006), 1255.
Jianjun Zhang, Kousaku Shimizu, Ying Zhao, Xinhua Geng, and Jun-ichi Hanna, phys,stat.sol.(a), 1–16, (2006).
Feng Zhu, Changchun Wei, Ying Zhao, Xiaodan Zhang, Yantao Gao, and Xinhua Geng, PVSEC-20
Author information
Authors and Affiliations
Corresponding author
Additional information
This work has been supported by National Basic Research Program of China (“973” Project, No.2006CB202602, 2006CB202603), the National Natural Science Foundation of China (No. 60437030), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars of the State Education Ministry.
Rights and permissions
About this article
Cite this article
Shang, Zr., Zhang, Jj., Zhang, Lp. et al. P-μc-Si1−xGex:H thin film by VHF-PECVD. Optoelectron. Lett. 4, 130–132 (2008). https://doi.org/10.1007/s11801-008-7137-0
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11801-008-7137-0